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FDA8440

Description
MOSFET N-CH 40V 100A TO-3PN
Categorysemiconductor    Discrete semiconductor   
File Size1MB,10 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FDA8440 Overview

MOSFET N-CH 40V 100A TO-3PN

FDA8440 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)40V
Current - Continuous Drain (Id) at 25°C30A(Ta),100A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs2.1 milliohm @ 80A, 10V
Vgs (th) (maximum value) when different Id3V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)450nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)24740pF @ 25V
FET function-
Power dissipation (maximum)306W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typeThrough hole
Supplier device packagingTO-3PN
Package/casingTO-3P-3,SC-65-3
Is Now Part of
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