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JANTXV1N5531B-1

Description
DIODE ZENER 11V DO35
Categorysemiconductor    Discrete semiconductor   
File Size192KB,2 Pages
ManufacturerM/A-COM Tech(MACOM)
Websitehttp://www.macom.com
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JANTXV1N5531B-1 Overview

DIODE ZENER 11V DO35

JANTXV1N5531B-1 Parametric

Parameter NameAttribute value
Voltage - Zener (nominal) (Vz)11V
Tolerance±5%
Impedance (max) (Zzt)80 Ohms
Current at different Vr - Reverse leakage current50nA @ 9.9V
Operating temperature-65°C ~ 175°C
Installation typeThrough hole
Package/casingDO-204AH, DO-35, axial
Supplier device packagingDO-35
notifyQPL or military specifications are for reference only. Non-military parts. See terms and conditions.
Low Noise Zener Diode Series
1N5518B-1 thru 1N5546B-1
Features
1N5518-1 THRU 1N5546B-1 Available in JAN, JANTX
and JANTXV PER MIL-PRF-19500/437
Low Reverse Leakage Characteristics
Low Noise Cheracteristics
Double Plug Construction
Metallurgically Bonded
Also available in DO-213 MELF style package.
Maximum Ratings
Junction and Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500 mW @ +50°C
Power Derating: 4 mW / °C above +50°C
Forward Voltage @ 200mA: 1.1 volts maximum
Electrical Specifications @ +25 ºC (Unless Otherwise Specified)
JEDEC
TYPE
Number
(Note1)
Volts
1N5518B
1N5519B
1N5520B
1N5521B
1N5522B
1N5523B
1N5524B
1N5525B
1N5526B
1N5527B
1N5528B
1N5529B
1N5530B
1N5531B
1N5532B
1N5533B
1N5534B
1N5535B
1N5536B
1N5537B
1N5538B
1N5539B
1N5540B
1N5541B
1N5542B
1N5543B
1N5544B
1N5545B
1N5546B
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
25.0
28.0
30.0
33.0
mA
20
20
20
20
10
5.0
3.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Ohms
26
24
22
18
22
26
30
30
30
35
40
45
60
80
90
90
100
100
100
100
100
100
100
100
100
100
100
100
100
μ
Adc
5.0
3.0
1.0
3.0
2.0
2.0
2.0
1.0
1.0
0.5
0.5
0.1
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
Normal
Zener
Voltage
Vz @ IZT
Zener
Test
Current
IZT
Maximum Zener
Impedance
B-C-D Suffix
ZZT @ IZT
IR
VR = Volts
NON &
A- Suffix
0.90
0.90
0.90
1.0
1.5
2.0
3.0
4.5
5.5
6.0
6.5
7.0
8.0
9.0
9.5
10.5
11.5
12.5
13.0
14.0
15.0
16.0
17.0
18.0
20.0
21.0
23.0
24.0
28.0
B-C-D-
Suffix
1.0
1.0
1.0
1.5
2.0
2.5
3.5
5.0
6.2
6.8
7.5
8.2
9.1
9.9
0.8
11.7
12.6
13.5
14.4
15.3
16.2
17.1
18.0
19.8
21.6
22.4
25.2
27.0
29.7
Maximum Reverse
Leakage Current
B-C-D Suffix
Maximum DC
Zener Current
IZM
mAdc
115
105
98
88
81
75
68
61
56
51
46
42
38
35
32
29
27
25
24
22
21
20
19
17
16
15
14
13
12
B-C-D Suff
Maximum Noise
Density
@IZ=250
μA
ND
μV
/
√Hz
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
2.0
4.0
4.0
4.0
5.0
10
15
20
20
20
20
20
20
20
20
20
20
20
20
20
Regulation
Factor
ΔV
Z
(Note 2)
Low VZ
Current
IZL
mAdc
2.0
2.0
2.0
2.0
1.0
0.25
0.25
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
Volts
0.90
0.90
0.85
0.75
0.60
0.65
0.30
0.20
0.10
0.05
0.05
0.05
0.10
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.25
0.30
0.35
0.40
0.45
0.50
NOTE1:
No Suffix type numbers are +20% with guaranteed limits for only VZ, lR, and VF. Units with “A” suffix are +10% with guaranteed limits for
VZ, lR, and VF. Units with guaranteed limits for all six parameters are indicated by a “B” suffix for +5.0% units, “C” suffix for +2.0% and
“D” suffix for +1.0%.
Delta VZ is the maximum difference between VZ @ IZT and VZ@ IZL measured with the device junction in thermal equilibrium.
NOTE 2:
1
Revision Date: 2/28/2013

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