Produktdatenblatt | Version 1.1
LB G6SP
www.osram-os.com
LB G6SP
Advanced Power TOPLED
®
Advanced Power TOPLED features a compact pack-
age with a wide brightness range and high luminous
efficiency.
Applications
—
Custom Tuning
—
Displays (Backlighting)
—
Interior Illumination e.g. Ambient Map
Features:
—
Package: white SMT package, colorless clear silicone resin
—
Chip technology: ThinGaN
—
Typ. Radiation: 120° (Lambertian emitter)
—
Color:
λ
dom
= 470 nm (● blue)
—
Optical efficacy: 10 lm/W
—
Corrosion Robustness Class: 3B
—
Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C,
Stress Test Qualification for Automotive Grade Discrete Semiconductors.
1
Version 1.4
| 2018-02-05
LB G6SP
Maximum Ratings
Parameter
Operating Temperature
Storage Temperature
Junction Temperature
Junction Temperature for short time applications
*
Forward current
T
S
= 25 °C
Surge Current
t ≤ 10 µs; D = 0.005 ; T
S
= 25 °C
ESD withstand voltage
acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)
Reverse current
2)
Symbol
T
op
T
stg
T
j
T
j
I
F
I
FS
V
ESD
I
R
max.
min.
max.
min.
max.
max.
max.
min.
max.
max.
Values
-40 °C
110 °C
-40 °C
110 °C
125 °C
150 °C
30 mA
250 mA
750 mA
2kV
Not designed for
reverse operation
*The median lifetime (L70/B50) for Tj =150°C is 100h.
3
Version 1.4
| 2018-02-05
LB G6SP
Characteristics
I
F
= 140 mA; T
S
= 25 °C
Parameter
Peak Wavelength
Dominant Wavelength
3)
I
F
= 140 mA
Spectral Bandwidth at 50% I
rel,max
Viewing angle at 50 % I
V
Forward Voltage
4)
I
F
= 140 mA
Reverse current
Symbol
λ
peak
λ
dom
typ.
min.
typ.
max.
typ.
typ.
min.
typ.
max.
Values
465 nm
464 nm
470 nm
476 nm
25 nm
120 °
2.90 V
3.30 V
4.10 V
Not designed
for reverse
operation
typ.
max.
typ.
max.
35 K / W
40 K / W
29 K / W
33 K / W
∆λ
2φ
V
F
I
R
Real thermal resistance junction/solderpoint
5)
Electrical thermal resistance junction/solderpoint
5)
with efficiency
η
e
= 17 %
R
thJS real
R
thJS elec.
4
Version 1.4
| 2018-02-05
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