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KSC2690/2690A
KSC2690/2690A
Audio Frequency
High Frequency Power Amplifier
• Complement to KSA1220/KSA1220A
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: KSC2690
: KSC2690A
V
CEO
Collector- Emitter Voltage
: KSC2690
: KSC2690A
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current(DC)
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
120
160
120
160
5
1.2
2.5
0.3
1.2
20
150
- 55 ~ 150
V
V
V
V
V
A
A
A
W
W
°C
°C
Parameter
Value
Units
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
V
CB
= 120V, I
E
= 0
V
EB
= 3V, I
C
= 0
V
CE
= 5V, I
C
= 5mA
V
CE
= 5V, I
C
= 0.3A
I
C
= 1A, I
B
= 0.2A
I
C
= 1A, I
B
= 0.2A
V
CE
= 5V, I
C
= 0.2A
V
CB
=10V, I
E
=0, f = 1MHz
35
60
105
140
0.4
1
155
19
Min.
Typ.
Max.
1
1
320
0.7
1.3
V
V
MHz
pF
Units
µA
µA
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
FE
Classificntion
Classification
h
FE2
R
60 ~ 120
O
100 ~ 200
Y
160 ~ 320
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2690/2690A
Typical Characteristics
1.6
1000
Pulse Test
1.4
V
CE
= 5V
Pulse Test
I
C
[A], COLLECTOR CURRENT
h
FE
, DC CURRENT GAIN
70
80
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
I
B
=10mA
I
B
=9mA
I
B
=8mA
I
B
=7mA
I
B
=6mA
I
B
=5mA
I
B
=4mA
I
B
=3mA
I
B
=2mA
I
B
=1mA
I
B
=0mA
10
20
30
40
50
60
100
10
1
1E-3
0.001
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
1000
I
C
= 5 I
B
Pulse Test
V
BE
(sat)
f = 1MHz
I
E
= 0
1
C
ob
[pF], CAPACITANCE
100
0.1
10
V
CE
(sat)
0.01
1E-3
1
0.01
0.1
1
10
1
10
100
1000
I
C
[A], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
10
I
C
[A], COLLECTOR CURRENT
V
CE
= 5V
Pulse Test
I
C
(max) Pulse
PW
m
10
s
1m
I
C
(max) DC
1
=
10
100
Dis
sip
Lim ation
ited
s
0u
s
s)
m
50
= t ed
i
W
(P Lim
DC S/b
10
0.1
KSC2690 V
CEO
MAX
0.01
KSC2690A
V
CEO
MAX
1000
1
0.01
0.1
1
1
10
100
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Current Gain Bandwidth Product
Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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