IAM - 93516
High Linearity Integrated GaAs Mixer
Data Sheet
Description
Avago Technologies’ IAM-93516 is a high linearity GaAs FET
Mixer using 0.5um enhancement mode pHEMT technology.
This device houses in a 3x3 LPCC package. The IAM-93516
has a built-in LO buffer amplifier and an IF amplification
stage that serve as an ideal solution for reducing board
space and delivering excellent high IIP3, gain and isolation
with a low LO drive power. The device is designed with a
differential configuration to provide good noise immunity.
The LO port is 50 ohm matched and can be driven differ-
ential or single ended. An interstage match is introduced
between the mixer and amplifier stage to allow device
tuning at the desired RF and LO frequency. The interstage
match can be a simple low pass, high pass or intermedi-
ate frequency trap. The amplifier output port is 200 ohm
matched and fully differential. The simple matching at
the RF port provides for optimum input return loss, noise
figure and IIP3 performance.
The IAM-93516 is ideally suited for frequency down con-
version for base station radio card receiver, microwave link
receiver, MMDS, modulation and demodulation for receiver
and general purpose resistive FET mixer, which require high
linearity. All devices are 100% RF and DC tested.
Applications
• Frequency down converter for base station radio card,
microwave link transceiver, and MMDS
• Modulation and demodulation for receiver
• General purpose resistive FET mixer for other high
linearity applications
Features
• DC =5V @ 111mA (Typ.)
• RF =1.91 GHz, Pin
RF
= -10 dBm;
• LO =1.7 GHz, Pin
LO
= 0 dBm;
• IF = 210 MHz unless otherwise specified
• High Linearity: 23.1 dBm IIP3(typ)
• Conversion Gain: 9.4 dB typical
• Low Noise Figure: 11.6 dB
• Wide band operation:
• 400-3000 MHz RF & LO input
• 70 – 300 MHz IF output
• Fully differential or single ended operation
• High P1dB: 19.3 dB typical
• Consistent RF performance over LO Power
• Low current consumption: 5V@ 111mA typical
• Excellent uniformity in product specifications
• 3mm x 3mm x 0.9mm LPCC package
• MTTF > 300 years
[1]
• MSL-1 and Lead-free.
Pin Connections and Package Marking
Interstage Match
+VDD
MIX_OUT+
RF+
1 IFA_IN+
+VDD
1
LO+
-
LO -
LO Buffer
Mixer
pF
MIX_OUT -
10
11 RF - 1 IFA_IN -
0 ohm
pF
Amplifier
IF+
1
1
IF -
Top View
Note:
Package marking provides orientation and identification
“M2” = Device Code
“X” = Month code indicates the month of manufacture
Interstage Match
1.0 Absolute Maximum Ratings
[1]
Symbol
V
D
Pin
RF
Pin
LO
T
CH
T
STG
q
ch_b
Parameter
Supply Voltage
[2]
CW RF Input Power
[2]
CW LO Input Power
[2]
Channel Temperature
Storage Temperature
Thermal Resistance
[4]
Units
V
dBm
dBm
°C
°C
°C/W
Absolute maximum
7
30
18
150
-65 to 150
39
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Determined at DC quiescent conditions and T
A
= 25°C.
3. Board (package belly) temperature T
B
is 25°C. Derate 25 mW/°C for T
B
> 130 °C.
4. Channel-to-board thermal resistance measured using Infra Red Imaging Method and 150
o
C Liquid Crystal Measurement method.
2.0 Product Consistency Distribution Charts
[5,6]
00
Stdev=0.
10
10 Stdev = 0.1
frequency
10
0
0
0
0
10
10
10
110
Id
111
11
11
11
+ Std
10
10 Stdev = 0.
10
- Std
+ Std
frequency
0
0
0
.
.0
.
.
.
.
0
1
- Std
+ Std
00
frequency
00
- Std
100
0
Figure 1. ID (mA)
[7]
Nominal = 111.2mA
Figure 2. GAIN (dB)
[8]
Nominal = 9.4dB
Figure 3. IIP3 (dBm)
[8]
Nominal = 23.1dBm
3.0 IAM-93516 Electrical Specifications
[6,8]
T
A
= 25
o
C, DC = 5V, RF Freq = 1.91GHz, Pin
RF
= -10dBm, LO Freq = 1.7GHz, Pin
LO
= 0dBm (unless otherwise specified)
Symbol
Id
[7]
G
C
IIP3
[8]
NF
P1dB
RL
RF
RL
LO
RL
IF
ISOL
L-R
ISOL
L-I
ISOL
R-L
Parameter and Test Condition
Device Current
Conversion Gain
Output Third Order Intercept Point
SSB Noise Figure
Output Power at 1dB Gain Compression
RF Port Return Loss
LO Port Return Loss
IF Port Return Loss
LO-RF Isolation
LO-IF Isolation
RF-IF Isolation
Units
mA
dB
dBm
dB
dBm
dB
dB
dB
dB
dB
dB
Min.
95.0
7.9
20.5
-
-
-
-
-
-
-
-
Typ
111.2
9.4
23.1
11.6
19.3
12.0
20.0
11.0
26.0
20.0
32.0
Max.
125.0
10.9
-
-
-
-
-
-
-
-
-
Notes:
5. Distribution data sample size is 510 samples taken from 3 different wafers lots. Future wafers allocated to this product may have nominal val-
ues anywhere between the upper and lower limits.
6. Measurements were made on a production test board, which represents a trade-off between optimal Gain, IIP3, NF, P1dB and isolation. Board
losses of 0.1dB at the RF input and IF amplifier output have been compensated. Balun loss of 0.57dB which was obtained from the Toko’s sup-
plied s-parameter file is also compensated. The total IF amplifier output loss is 0.67dB.
7. The device current is measured without LO signal. At LO=0dBm, the current reduces by around 6 to 7mA.
8. Gain, P1dB, isolation and return loss test conditions: F
RF
=1.91GHz, F
LO
= 1.7GHz, F
IF
= 210MHz, Pin
RF
= -10dBm, Pin
LO
= 0dBm.
IIP3 test condition: F
RF1
= 1.91GHz, F
RF2
= 1.89GHz, F
LO
= 1.7GHz, Pin
RF
= -10dBm, Pin
LO
= 0dBm.
4.0 IAM-93516 Typical Performance
[9,10]
T
A
= 25
o
C, DC = 5V, RF Freq = 1.91GHz, Pin
RF
= -10dBm, LO Freq = 1.7GHz (unless otherwise specified)
1nH
nH
Ohm
1pF
0.pF
LO +
1.pF
Interstage Match
0nH
Balun Transformer
Toko BF
1DB-101
IF
.nH
1.nH
RF
1.pF
LO -
Interstage Match
1nH
nH
Ohm
0nH
1pF
.nH
1000pF
1000pF
0.pF
1.pF
Figure 4. IAM-93516 demoboard schematic optimally tuned at F
RF
= 1.91GHz and F
LO
= 1.7GHz
10
1
10
11
110
Id (mA)
10
100
0
0
-1
-1
-10
-
-
-
-
0
C
C
-0 C
Conversion Gain (dB)
10
.
.
.
.
.0
.
-1
-1
-10
-
-
-
-
LO Power (dBm)
0
C
-0 C
C
LO Power(dBm)
Figure 5. Current vs. LO Power and Temperature
Figure 6. Conversion Gain vs. LO Power and Temperature
1
0.
0
1.
P1dB (dBm)
1
1.
1
1.
1
1.
-1
-1
-10
-
-
-
-
0
C
-0 C
C
IIP (dBm)
1
1
1
1
-1
-1
-10
-
-
-
-
0
C
-0 C
C
LO Power (dBm)
LO Power (dBm)
Figure 7. IIP3 vs. LO Power and Temperature
Figure 8. P1dB vs. LO Power and Temperature
1
1
1
C
-0 C
C
0
Isolation_LO_IF (dB)
0
NF (dB)
1
1
11
-1
-1
-10
-
-
-
-
0
1
C
10
-1
-0 C
C
-1
-10
-
-
-
-
0
LO Power (dBm)
LO Power (dBm)
Figure 9. Noise Figure vs. LO Power and Temperature
Figure 10. LO-IF Isolation vs. LO Power and Temperature
0
0
0
1
-1
C
-0 C
C
0
Isolation_LO_RF (dB)
Isolation_RF_IF (dB)
0
C
1
10
-1
-0 C
C
-1
-10
-
-
-
-
0
-1
-10
-
LO Power (dBm)
-
-
-
LO Power(dBm)
0
Figure 11. RF-IF Isolation vs. LO Power and Temperature
Figure 12. LO-RF Isolation vs. LO Power and Temperature
1
10
1
0
1
.
Conversion Gain (dB)
0
1.
LO= -dBm
LO=0dBm
LO=dBm
1.
1.
1.
RF Frequency (GHz)
.0
.1
IIP (dBm)
LO= -dBm
LO=0dBm
LO=dBm
1.
1.
1.
RF Frequency (GHz)
.1
.
1
1.
Figure 13. Conversion Gain vs. RF Frequency and LO Power at
fixed IF frequency
[11]
Figure 14. IIP3 vs. RF Frequency and LO Power at fixed IF fre-
quency
[11]
0
Isolation_LO_IF (dB)
Isolation_RF_IF (dB)
0
0
1
1.
1.
1.
1.
.1
.
RF Frequency (GHz)
LO=-dBm
LO=0dBm
LO=dBm
0
1
1
1
1
10
1.
1.
1.
1.
1.
LO= -dBm
LO=0dBm
LO=dBm
1.
LO Frequency (GHz)
Figure 15. RF-IF Isolation vs. RF Frequency and LO Power at fixed
IF frequency
Figure 16. LO-IF Isolation vs. LO Frequency and LO Power at fixed
IF frequency
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