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BSL214NL6327HTSA1

Description
MOSFET 2N-CH 20V 1.5A 6TSOP
CategoryDiscrete semiconductor    The transistor   
File Size323KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BSL214NL6327HTSA1 Overview

MOSFET 2N-CH 20V 1.5A 6TSOP

BSL214NL6327HTSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeTSOP
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
Factory Lead Time1 week
Is SamacsysN
Other featuresAVALANCHE RATED, LOGIC LEVEL COMAIBLE
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)1.5 A
Maximum drain-source on-resistance0.14 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)9 pF
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
BSL214N
OptiMOS
2 Small-Signal-Transistor
Features
• Dual N-channel
• Enhancement mode
• Super Logic level (2.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=4.5 V
V
GS
=2.5 V
I
D
20
140
250
1.5
A
V
mW
PG-TSOP6
6
5
4
1
2
3
Type
BSL214N
Package
TSOP6
Tape and Reel Information
H6327: 3000 pcs/ reel
Marking
sPM
Lead Free
Yes
Packing
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
1)
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=1.5A,
R
GS
=25
W
I
D
=1.5 A,
V
DS
=16 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
1.5
1.2
6
3.7
mJ
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
Power dissipation
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
1)
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
±12
0.5
-55 ... 150
0 (<250V)
260 °C
55/150/56
V
W
°C
Remark: one of both transistors in operation
Rev 2.3
page 1
2013-11-06

BSL214NL6327HTSA1 Related Products

BSL214NL6327HTSA1 BSL214N BSL214NH6327
Description MOSFET 2N-CH 20V 1.5A 6TSOP The best? Small-Signal-Transistor Small Signal Field-Effect Transistor,
Is it Rohs certified? conform to conform to conform to
Maker Infineon Infineon Infineon
Reach Compliance Code unknown compli compliant
Is it lead-free? Lead free Lead free -
ECCN code EAR99 - EAR99
Is Samacsys N - N
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE -
Maximum operating temperature 150 °C 150 °C -
Polarity/channel type N-CHANNEL N-CHANNEL -
surface mount YES YES -
Base Number Matches 1 - 1
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