2009-9
PRODUCT GUIDE
MOSFETs
SEMICONDUCTOR
http://www.semicon.toshiba.co.jp/eng
C O N T E N T S
1 Features and Structures
.......................................................................
3
2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes
........
4
2-1 MOSFET Product Lines ................................................................................... 4
2-2 Part Numbering Schemes ................................................................................ 5
3 Selection Guide (By Absolute Maximum Ratings)
.............................
6
4 Low-V
DSS
MOSFETs (in Small SMD Packages)
.................................
16
4-1 Packaging Options ......................................................................................... 16
• SSM Series
• TPC Series
4-2 Application Examples and Block Diagrams .................................................... 17
• Cell Phone (Power Supply Circuit)
• Notebook PC (Power Supply Circuit)
• Lithium-Ion Secondary Battery (Battery Protection Circuits)
• Motor Driver (Power Driver Circuit)
4-3 Low-V
DSS
MOSFET Roadmaps ..................................................................... 19
• Roadmap for Trench MOSFETs
• Package Options
4-4 Low-V
DSS
, High-Speed MOSFETs ................................................................. 21
• Synchronous Rectification DC-DC Converters
– Block Diagram, Timing Chart and Power Loss Factors
– Summary Results of Power Loss Simulation and Key Parameters for MOSFETs
– Efficiency Improvement by Thermally Enhanced Package and New Process Technology
– MOSBD (MOSFET with SBD)
• High-Speed MOSFET Offerings
4-5 Low-V
DSS
, Low-R
DS(ON)
MOSFETs (for Lithium-Ion Battery Protection) ......... 26
• Lithium-Ion Battery Protection Circuit Trend
• MOSFET Roadmap
• Low-ON-resistance N-Channel Power MOSFETs
• Low-ON-resistance P-Channel Power MOSFETs
4-6 Semi-Power MOSFET Offerings .................................................................... 28
• Semi-Power P-Channel Single MOSFETs
• Semi-Power N-Channel Single MOSFETs
• Semi-Power Dual MOSFETs
• MOSFET with a Schottky Barrier Diode
• VS-6 Series … [Part Number: TPC6xxx]
• VS-8 Series … [Part Number: TPCF8xxx]
• PS-8 Series … [Part Number: TPCP8xxx]
• Chip LGA Series ... [Part Number: TPCL4xxx]
• STP2 Series ... [Part Number: TPCT4xxx]
• TSON Advance Series … [Part Number: TPCC8xxx]
• TSSOP Advance Series … [Part Number: TPCM8xxx]
• SOP-8 Series … [Part Number: TPC8xxx]
• SOP Advance Series … [Part Number: TPCA8xxx]
• DPAK Series ... [Part Number: TKxxPxxxM1]
4-7 Standard MOSFET Series (I
D
< 500 mA)....................................................... 36
• Single MOSFETs
• Dual MOSFETs
Toshiba’s MOSFET devices
meet the needs of a wide range
of ultra-high-density applications.
5 Low-V
DSS
, High-Q
g
MOSFETs
.............................................................
37
5-1 TO-220SM(W) Series ..................................................................................... 37
5-2 U-MOS (Trench Type) Series ......................................................................... 38
5-3 U-MOS Series for Synchronous Rectification (V
DSS
= 60 V to 150 V) ............ 39
6 Mid- and High-V
DSS
MOSFETs
.............................................................40
6-1
6-2
6-3
6-4
π-MOSVII
Series (V
DSS
= 450 V to 650 V) ..................................................... 40
Super-Junction DTMOS Series (V
DSS
= 600 V, 650 V) ................................... 41
High-speed
π-MOS
Series (V
DSS
= 450 V to 600 V)....................................... 42
π-MOS
Series................................................................................................. 43
7 MOSFET Part Numbers
........................................................................
46
7-1 Alphanumeric Index of Part Numbers ............................................................ 46
8 Product Obsolescence
........................................................................
53
8-1 End-of-Life Products ...................................................................................... 53
9 Packaging
.............................................................................................
55
9-1 Compact Surface-Mount Packages ................................................................ 55
9-2 Through-Hole Packages................................................................................. 66
2
1
Features and Structures
1) No carrier storage effect; superior frequency and switching characteristics
2) Rugged and no current concentration
3) Voltage-controlled device, hence low drive power
4) Easy parallel connection
■
Toshiba MOSFETs have the following additional features:
1) Guaranteed avalanche capability.................
2) Improved functioning of built-in diodes ........
3) High ruggedness ..........................................
4) High-speed switching ...................................
5) Low R
(DS)ON
...................................................
6) Smaller packages .........................................
7) Low drive loss ...............................................
Allows an absorber circuit to be simplified
Enhanced circuit design flexibility
Increased margin for circuit design
Higher speed in end-product’s operation
Reduced end-product’s power consumption
Reduced end-product size
Reduced end product’s power
■
Structures of Toshiba MOSFETs
Double-Diffusion Structure
Source
Gate
●
π-MOS
P
n
+
n
–
n
+
n
+
P
Toshiba Power MOSFETs use a double-diffusion MOS (D-MOS) structure, which
produces high-withstand voltage, to form channels. This structure is especially well
suited to high-withstand voltage and high-current devices.
A high level of integration yields a high-performance Power MOSFET with low
ON-resistance and low power loss.
Drain
Trench Structure
Source
Gate
n
+
P
n
–
n
+
n
+
P
●
U-MOS
Higher channel density is achieved by connecting channels vertically to form a
U-groove at the gate region, a structure that yields a lower ON-resistance than
other MOSFET structures.
Drain
Super-Junction Structure
Source
Gate
n
+
P
n
n
+
n
+
P
●
DTMOS
The super-junction structure, which has P-type pillar layers as shown left,
realizes high withstand voltage and ON-resistance lower than the conventional
theoretical limit of silicon.
Drain
3
2
Toshiba’s MOSFET Product Lines and Part Numbering
2-1 MOSFET Product Lines
SSM Series (V
DSS
= 12 V to 60 V)
Very compact and thin, the SSM Series is suitable for use in various electronic devices.
The SSM Series is available in a wide range of packages and features low voltage drive.
■
Applications
●
Cell phones
●
Notebook PCs
●
Portable electronic devices
●
Small-signal switching
VS and PS Series (V
DSS
= 12 V to 40 V)
Very compact and thin, the VS and PS Series are suitable for use in various
electronic devices.
■
Applications
●
Cell phones
●
Notebook PCs
●
Portable electronic devices
Chip LGA and STP Series (V
DSS
= 20 V to 30 V)
The LGA and STP Series are housed in an ultra-small and thin package and are
suitable for use in lithium-ion secondary battery protection circuits in various portable
electronic devices.
■
Applications
●
Lithium-ion secondary battery protection circuits
SOP and TSON Series (V
DSS
= 20 V to 250 V)
The SOP and TSON Series are compact and thin, and require only a small mounting area.
They are suitable for lithium-ion secondary battery protection circuits and notebook PCs.
■
Applications
●
Lithium-ion secondary battery protection circuits
●
Notebook PCs
●
Portable electronic devices
●
DC-DC converters
TO-220SM(W) Series (V
DSS
= 40 V to 150 V)
The TO-220SM package, which uses Cu connectors and a wide source terminal,
realizes low ON-resistance and a high current-carrying capability.
■
Applications
●
Motor drivers
●
Switching power supplies
Low-V
DSS
, High-Q
g
U-MOS Series (V
DSS
= 40 V to 100 V)
High integration is achieved using a trench technology. Low-voltage drive (V
GS
= 4 V)
is possible due to ultra-low ON-resistance.
■
Applications
●
Motor drivers
●
Solenoids and lamp drivers
U-MOS Series for Synchronous Rectification (V
DSS
= 60 V to 150 V)
Fabricated using a trench technology, the U-MOS Series is ideal for synchronous
rectification on the secondary side of power supply circuits.
■
Applications
●
Switching power supplies
●
AC adapters
●
Motor drivers
New
π-MOSVII
Series (V
DSS
= 450 V to 650 V)
The latest addition to the
π-MOS
portfolio, the
π-MOSVII
Series offers reduced
capacitances due to optimized chip design and is available with a greatly wider
range of electrical characteristics.
■
Applications
●
Switching power supplies
●
AC adapters
Super-Junction DTMOS Series (V
DSS
= 600, 650 V)
The super-junction DTMOS Series achieves low ON-resistance and low gate charge
(Qg) due to the use of the latest super-junction structure.
■
Applications
●
Switching power supplies
●
AC adapters
●
Motor drivers
High-Speed
π-MOS
Series (V
DSS
= 450 V to 600 V)
The new High-Speed
π-MOS
Series achieves higher switching speed than the
well-proven
π-MOS
Series. Two series are available: high-speed switching series
and high-speed diode series.
■
Applications
●
Inverters
●
Switching power supplies
●
Motor drivers
●
AC adapters
4
Schemes
2-2 Part Numbering Schemes
■
Small-Signal MOSFET (SSM) Series
SSM 3 K 101 TU
Package
Serial number of the products
Polarity and internal configuration
K: N-channel, single
J: P-channel, single
N: N-channel, dual
P: P-channel, dual
L: N-channel and P-channel (dual)
E: N-channel and P-channel
(pre-wired as a load switch)
H: N-channel and SBD
G: P-channel and SBD
<3-pin>
F: S-Mini
FU: USM
FS: SSM
FV: VESM
T: TSM
TU: UFM
CT: CST3
CTB: CST3B
<4-pin>
CT: CST4
<6-pin>
FU: US6
FE: ES6
TU: UF6
CTD: CST6D
<5-pin>
F: SMV
FU: USV
FE: ESV
TU: UFV
Pin count
Small-Signal MOSFET
■
Multi-Pin Series
■
New Series
■
Conventional Series
TPCM8 0 01 -H
H: High-speed type
None: Low-ON-resistance type
Serial number of the products
0: N-channel, single
1: P-channel, single
2: N-channel, dual
3: P-channel, dual
4: N-channel and P-channel, dual
A: N-channel and SBD
B: P-channel and SBD
J: P-channel and NPN
TK 55 A 10 J 1
Additional information
1: Low-capacitance type
3: Low-ON-resistance type
5: Fast body diode type
2SK
½ ½ ½ ½
N-channel MOS
2SJ
½ ½ ½ ½
P-channel MOS
Series
C:
π-MOSVI
D:
π-MOSVII
J: U-MOSIII
M: U-MOSVI
TPC6: VS-6 Series
TPCF8: VS-8 Series
TPCP8: PS-8 Series
TPCC8: TSON Advance Series
TPCS8: TSSOP-8 Series
TPCM8: TSSOP Advance Series
TPC8: SOP-8 Series
TPCA8: SOP Advance Series
TPCT4: STP Series
TPCL4: Chip LGA
K: U-MOSIV
T: DTMOSI
U: DTMOSII
Voltage: 10% of the V
DSS
Package
A: TO-220SIS
D: TO-220(W)
F: TO-220SM(W)
J: TO-3P(N)
X: TFP
P: DPAK
Q: New PW-Mold2
Current rating
TK: N-channel
TJ: P-channel
5
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