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BSL306NL6327HTSA1

Description
MOSFET 2N-CH 30V 2.3A 6TSOP
CategoryDiscrete semiconductor    The transistor   
File Size344KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSL306NL6327HTSA1 Overview

MOSFET 2N-CH 30V 2.3A 6TSOP

BSL306NL6327HTSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeTSOP
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresAVALANCHE RATED
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)2.3 A
Maximum drain-source on-resistance0.057 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)17 pF
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
BSL306N
OptiMOS™2 Small-Signal-Transistor
Features
• Dual N-channel
• Enhancement mode
• Logic level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
I
D
30
57
93
2.3
PG-TSOP-6
6
5
4
V
mW
A
1
2
3
Type
BSL306N
Package
TSOP-6
Tape and Reel Information
H6327: 3000 pcs/ reel
Marking
sPN
Lead Free
Yes
Packing
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
1)
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=2.3 A,
R
GS
=25
W
I
D
=2.3 A,
V
DS
=16 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
2.3
1.8
9
10.8
mJ
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
Power dissipation
1)
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
1)
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
±20
0.5
-55 ... 150
0 (<250V)
260 °C
55/150/56
V
W
°C
Remark: one of both transistors active
Rev 2.4
page 1
2013-11-06

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