AOT29S50L/AOB29S50L/AOTF29S50L/AOTF29S50
500V 29A
α
MOS
TM
Power Transistor
General Description
The AOT29S50L & AOB29S50L & AOTF29S50L &
AOTF29S50 have been fabricated using the advanced
TM
αMOS
high voltage process that is designed to deliver high
levels of performance and robustness in switching
applications.
By providing low R
DS(on)
, Q
g
and E
OSS
along with guaranteed
avalanche capability these parts can be adopted quickly into
new and existing offline power supply designs.
Product Summary
V
DS
@ T
j,max
I
DM
R
DS(ON),max
Q
g,typ
E
oss
@ 400V
600V
120A
0.15Ω
26.6nC
6.3µJ
100% UIS Tested
100% R
g
Tested
Top View
TO-220
D
TO-220F
D
TO-263
D
2
PAK
D
G
D
AOT29S50L
G
S
AOTF29S50(L)
G D
S
G
AOB29S50L
S
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
AOT29S50L/AOB29S50L AOTF29S50
Drain-Source Voltage
V
DS
500
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy
C
G
C
AOTF29S50L
Units
V
V
V
GS
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
E
AS
o
±30
29
18
120
7.5
110
608
357
2.9
100
20
-55 to 150
300
AOT29S50L/AOB29S50L
65
0.5
0.35
AOTF29S50
65
--
2.5
AOTF29S50L
65
--
3.3
50
0.4
37.9
0.3
29*
18*
29*
18*
A
A
mJ
mJ
W
o
W/ C
Single pulsed avalanche energy
T
C
=25°C
B
Power Dissipation
Derate above 25 C
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
H
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
J
Thermal Characteristics
Parameter
A,D
P
D
dv/dt
T
J
, T
STG
T
L
Symbol
R
θJA
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
R
θCS
Maximum Case-to-sink
A
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
Rev1.0: August 2017
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Page 1 of 7
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
STATIC PARAMETERS
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
V
SD
I
S
I
SM
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
Maximum Body-Diode Pulsed Current
I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
V
DS
=500V, V
GS
=0V
V
DS
=400V, T
J
=150°C
V
DS
=0V, V
GS
=±30V
V
DS
=5V,I
D
=250µA
V
GS
=10V, I
D
=14.5A, T
J
=25°C
V
GS
=10V, I
D
=14.5A, T
J
=150°C
I
S
=14.5A,V
GS
=0V, T
J
=25°C
500
550
-
-
-
2.6
-
-
-
-
-
-
-
-
V
GS
=0V, V
DS
=0 to 400V, f=1MHz
-
V
GS
=0V, V
DS
=100V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
-
-
-
V
GS
=10V, V
DS
=400V, I
D
=14.5A
-
-
-
V
GS
=10V, V
DS
=400V, I
D
=14.5A,
R
G
=25Ω
I
F
=14.5A,dI/dt=100A/µs,V
DS
=400V
I
F
=14.5A,dI/dt=100A/µs,V
DS
=400V
-
-
-
-
-
-
227
2.5
4.8
26.6
6.2
9.2
28
39
103
40
387
29.6
7.3
-
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
A
µC
-
600
-
10
-
3.3
0.13
0.34
0.85
-
-
1312
88
78
-
-
1
-
±100
3.9
0.15
0.4
-
29
120
-
-
-
V
µA
nΑ
V
Ω
Ω
V
A
A
pF
pF
pF
Parameter
Conditions
Min
Typ
Max
Units
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
o(er)
C
o(tr)
C
rss
R
g
Output Capacitance
Effective output capacitance, energy
related
H
Effective output capacitance, time
related
I
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=100V, f=1MHz
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
I
rm
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
Body Diode Reverse Recovery Charge I
F
=14.5A,dI/dt=100A/µs,V
DS
=400V
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C, Ratings are based on low frequency and duty cycles to keep initial
T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, I
AS
=4.5A, V
DD
=150V, Starting T
J
=25°C
H. C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
I. C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
J. Wavesoldering only allowed at leads.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1.0: August 2017
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Page 2 of 7
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
45
40
35
30
I
D
(A)
I
D
(A)
25
20
15
10
5
0
0
5
10
15
20
V
DS
(Volts)
Figure 1: On-Region Characteristics@25°C
V
GS
=4.5V
5V
5.5V
10V
7V
6V
40
10V
35
30
25
20
5.5V
15
10
5
0
0
5
10
15
20
5V
V
GS
=4.5V
6V
7V
V
DS
(Volts)
Figure 2: On-Region Characteristics@125°C
1000
V
DS
=20V
100
125°C
R
DS(ON)
(Ω)
10
I
D
(A)
-55°C
0.5
0.4
0.3
V
GS
=10V
1
25°C
0.2
0.1
0.1
0.01
2
4
6
8
10
0.0
0
10
20
30
40
50
60
V
GS
(Volts)
Figure 3: Transfer Characteristics
I
D
(A)
Figure 4: On-Resistance vs. Drain Current and Gate
Voltage
1.2
3
Normalized On-Resistance
2.5
2
1.5
1
0.5
0
-100
BV
DSS
(Normalized)
100
150
200
V
GS
=10V
I
D
=14.5A
1.1
1
0.9
-50
0
50
0.8
-100
-50
0
50
100
150
200
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
T
J
(
o
C)
Figure 6: Break Down vs. Junction Temperature
Rev1.0: August 2017
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Page 3 of 7
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E+02
1.0E+01
1.0E+00
V
GS
(Volts)
I
S
(A)
1.0E-01
1.0E-02
1.0E-03
3
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 7: Body-Diode Characteristics (Note E)
0
0
5
10
15
20
25
30
35
40
Q
g
(nC)
Figure 8: Gate-Charge Characteristics
25°C
9
125°C
15
12
V
DS
=400V
I
D
=14.5A
6
10000
C
iss
Eoss(uJ)
1000
Capacitance (pF)
C
oss
100
10
8
E
oss
6
4
10
C
rss
2
1
0
100
200
300
400
500
V
DS
(Volts)
Figure 9: Capacitance Characteristics
0
0
100
200
300
400
500
V
DS
(Volts)
Figure 10: Coss stroed Energy
1000
100
I
D
(Amps)
10
1
0.1
0.01
1
10
V
DS
(Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)29S50L (Note F)
100
1000
1000
100
R
DS(ON)
limited
10µs
I
D
(Amps)
100µs
1ms
DC
T
J(Max)
=150°C
T
C
=25°C
10ms
10
R
DS(ON)
limited
10µs
100µs
1ms
1
DC
0.1
T
J(Max)
=150°C
T
C
=25°C
0.1
1
10
V
DS
(Volts)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF29S50(Note F)
100
10ms
0.1s
1s
0.01
1000
Rev1.0: August 2017
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Page 4 of 7
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
700
600
10µs
E
AS
(mJ)
100µs
1ms
DC
10ms
0.1s
1s
500
400
300
200
100
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 14: Avalanche energy
100
I
D
(Amps)
R
DS(ON)
limited
10
1
0.1
T
J(Max)
=150°C
T
C
=25°C
0.1
1
10
V
DS
(Volts)
Figure 13: Maximum Forward Biased Safe
Operating Area for AOTF29S50L(Note F)
100
0.01
1000
30
25
Current rating I
D
(A)
20
15
10
5
0
0
25
50
75
100
125
150
T
CASE
(°C)
Figure 15: Current De-rating (Note B)
Rev1.0: August 2017
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Page 5 of 7
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