NCV4264-2
Low I
Q
Low Dropout
Linear Regulator
The NCV4264−2 is functionally and pin for pin compatible with
NCV4264 with a lower quiescent current consumption. Its output
stage supplies 100 mA with
"2.0%
output voltage accuracy.
Maximum dropout voltage is 500 mV at 100 mA load current.
It is internally protected against 45 V input transients, input supply
reversal, output overcurrent faults, and excess die temperature. No
external components are required to enable these features.
Features
TAB
2
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MARKING
DIAGRAM
SOT−223
ST SUFFIX
CASE 318E
1
8
8
1
SOIC−8 Fused
CASE 751
1
x
A
L
Y
W
G
= 5 (5.0 V Version)
=
3 (3.3 V Version)
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
V642x
ALYWX
G
AYW
V642xG
G
•
•
•
•
•
•
•
3.3 V and 5.0 V Fixed Output
"2.0%
Output Accuracy, Over Full Temperature Range
60
mA
Maximum Quiescent Current at I
OUT
= 100
mA
500 mV Maximum Dropout Voltage at 100 mA Load Current
Wide Input Voltage Operating Range of 4.5 V to 45 V
AEC−Q100 Grade 1 Qualified and PPAP Capable
Internal Fault Protection
♦
−42 V Reverse Voltage
♦
Short Circuit/Overcurrent
♦
Thermal Overload
•
This is a Pb−Free Device
1
3
(Note: Microdot may be in either location)
PIN CONNECTIONS
(SOT−223)
PIN
FUNCTION
1
V
IN
2,TAB GND
3
V
OUT
(SOIC−8 Fused)
PIN
FUNCTION
1
NC
2,
V
IN
3
GND
4.
V
OUT
5−8.
NC
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
July, 2017 − Rev. 9
Publication Order Number:
NCV4264−2/D
NCV4264−2
IN
OUT
1.3 V
Reference
+
Error
Amp
-
Thermal
Shutdown
GND
Figure 1. Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
SOT−223
1
2
3
TAB
−
SOIC−8
2
3
4
−
1, 5−8
Symbol
V
IN
GND
V
OUT
GND
NC
Function
Unregulated input voltage; 4.5 V to 45 V.
Ground; substrate.
Regulated output voltage; collector of the internal PNP pass transistor.
Ground; substrate and best thermal connection to the die.
No Connection.
OPERATING RANGE
Rating
V
IN
,
DC Input Operating Voltage (Note 3)
Junction Temperature Operating Range
Symbol
V
IN
T
J
Min
4.5
−40
Max
+45
+150
Unit
V
°C
MAXIMUM RATINGS
Rating
V
IN
,
DC Input Voltage
V
OUT
, DC Voltage
Storage Temperature
Moisture Sensitivity Level
ESD Capability, Human Body Model (Note 1)
ESD Capability, Machine Model (Note 1)
Lead Temperature Soldering
Reflow (SMD Styles Only), Lead Free (Note 2)
SOT223
SOIC−8 Fused
Symbol
V
IN
V
OUT
T
stg
MSL
V
ESDHB
V
ESDMIM
T
sld
−
265 pk
4000
200
Min
−42
−0.3
−55
3
1
−
−
Max
+45
+18
+150
Unit
V
V
°C
−
V
V
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. This device series incorporates ESD protection and is tested by the following methods:
ESD HBM tested per AEC−Q100−002 (EIA/JESD22−A 114C)
ESD MM tested per AEC−Q100−003 (EIA/JESD22−A 115C)
2. Lead Free, 60 sec – 150 sec above 217°C, 40 sec max at peak.
3. See specific conditions for DC operating input voltage lower than 4.5 V in the ELECTRICAL CHRACTERISTICS table at page 3
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2
NCV4264−2
THERMAL RESISTANCE
Parameter
Junction−to−Ambient
Junction−to−Case
SOT−223
SOIC−8 Fused
SOT−223
SOIC−8 Fused
Symbol
R
qJA
R
qJC
Min
−
−
Max
99 (Note 4)
145
17
−
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(V
IN
= 13.5 V, T
J
= −40°C to +150°C, unless otherwise noted.)
Characteristic
Output Voltage
5.0 V Version
Output Voltage
3.3 V Version
Output Voltage
3.3 V Version
Line Regulation
5.0 V Version
Line Regulation
3.3 V Version
Load Regulation
Dropout Voltage − 5.0 V Version
Dropout Voltage − 3.3 V Version
Quiescent Current
Symbol
V
OUT
Test Conditions
5.0 mA
v
I
OUT
v
100 mA (Note 5)
6.0 V
v
V
IN
v
28 V
5.0 mA
v
I
OUT
v
100 mA (Note 5)
4.5 V
v
V
IN
v
28 V
I
OUT
= 5 mA, V
IN
= 4 V (Note 7)
I
OUT
= 5.0 mA
6.0 V
v
V
IN
v
28 V
I
OUT
= 5.0 mA
4.5 V
v
V
IN
v
28 V
1.0 mA
v
I
OUT
v
100 mA (Note 5)
I
OUT
= 100 mA (Notes 5 & 6)
I
OUT
= 100 mA (Notes 5 & 8)
I
OUT
= 100
mA
T
J
= 25°C
T
J
= −40°C to +85°C
T
J
= −40°C to 150°C
I
OUT
= 50 mA (Note 5)
V
RIPPLE
= 0.5 V
P−P
, F = 100 Hz
I
OUT
= 0.1 mA to 100 mA
(Notes 5 & 7)
I
OUT
= 0.1 mA to 100 mA
(Notes 5 & 7)
Min
4.900
Typ
5.000
Max
5.100
Unit
V
V
OUT
3.234
3.300
3.366
V
V
OUT
DV
OUT
vs. V
IN
DV
OUT
vs. V
IN
DV
OUT
vs. I
OUT
V
IN
−V
OUT
V
IN
−V
OUT
I
q
3.234
−30
−30
−40
−
−
−
−
−
−
−
10
−
22
−
3.300
5.0
5.0
5.0
270
−
33
33
33
1.5
67
−
−
−
−
3.366
+30
+30
+40
500
1.266
55
60
70
4.0
−
−
9.0
−
16
V
mV
mV
mV
mV
V
mA
Active Ground Current
Power Supply Rejection
Output Capacitor for Stability
5.0 V Version
Output Capacitor for Stability
3.3 V Version
PROTECTION
Current Limit
Short Circuit Current Limit
Thermal Shutdown Threshold
I
G(ON)
PSRR
C
OUT
ESR
C
OUT
ESR
mA
dB
mF
W
mF
W
I
OUT(LIM)
I
OUT(SC)
T
TSD
V
OUT
= 4.5 V (5.0 V Version) (Note 5)
V
OUT
= 3.0 V (3.3 V Version) (Note 5)
V
OUT
= 0 V (Note 5)
(Note 7)
150
150
40
150
−
−
−
−
500
500
500
200
mA
mA
°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. 1 oz., 100 mm
2
copper area.
5. Use pulse loading to limit power dissipation.
6. Dropout voltage = (V
IN
–V
OUT
), measured when the output voltage has dropped 100 mV relative to the nominal value obtained with
V
IN
= 13.5 V.
7. Not tested in production. Limits are guaranteed by design.
8. V
DO
= V
IN
− V
OUT
. For output voltage set to < 4.5 V, V
DO
will be constrained by the minimum input voltage.
4.5−45 V
Input
C
in
100 nF
V
in
4264−2
V
out
Output
C
OUT
10
mF
− 5.0 V Version
22
mF
− 3.3 V Version
GND
Figure 2. Applications Circuit
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NCV4264−2
TYPICAL CHARACTERISTIC CURVES − 5 V Version
10
9
8
7
ESR (W)
6
5
4
3
2
1
0
0
Stable Region
25
50
75
100
V
in
= 13.5 V
C
out
≥
10
mF
125
150
Unstable Region
OUTPUT CURRENT (mA)
Figure 3. ESR Stability vs. Output Current
(5 V Version)
12
125°C
QUIESCENT CURRENT (mA)
0.4
QUIESCENT CURRENT (mA)
10
25°C
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
125°C
25°C
−40°C
8
6
4
2
−40°C
V
IN
= 13.5 V
0
0
50
100
150
200
OUTPUT CURRENT (mA)
V
IN
= 13.5 V
0
5
10
15
OUTPUT CURRENT (mA)
Figure 4. Quiescent Current vs. Output Current
(5 V Version)
0.45
0.40
DROPOUT VOLTAGE (V)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0
50
100
150
200
OUTPUT CURRENT (mA)
25°C
−40°C
125°C
OUTPUT VOLTAGE (V)
5.10
5.08
5.06
5.04
5.02
5.00
4.98
4.96
4.94
Figure 5. Quiescent Current vs. Output Current
(Light Load) (5 V Version)
4.92
4.90
−50
0
50
TEMPERATURE (°C)
100
150
Figure 6. Dropout Voltage vs. Output Current
(5 V Version)
Figure 7. Output Voltage vs. Temperature
(5 V Version)
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NCV4264−2
TYPICAL CHARACTERISTIC CURVES − 5 V Version
180
160
OUTPUT CURRENT (mA)
5.0
OUTPUT VOLTAGE (V)
140
120
100
80
60
40
20
0
0
10
20
30
40
50
INPUT VOLTAGE (V)
T
A
= 125°C
T
A
= 25°C
4.0
3.0
2.0
1.0
R
L
= 50
W
0
0
2.0
4.0
6.0
8.0
10
INPUT VOLTAGE (V)
6.0
Figure 8. Output Current vs. Input Voltage
(5 V Version)
16
QUIESCENT CURRENT (mA)
Figure 9. Output Voltage vs. Input Voltage
(5 V Version)
14
12
10
8
6
4
2
0
0
R
L
= 100
W
R
L
= 50
W
10
20
30
40
50
INPUT VOLTAGE (V)
Figure 10. Quiescent Current vs. Input Voltage
(5 V Version)
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Embedded System
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