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BYM300A120DN2HOSA1

Description
MOD IGBT MED POWER 62MM-2
CategoryDiscrete semiconductor    diode   
File Size129KB,5 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

BYM300A120DN2HOSA1 Overview

MOD IGBT MED POWER 62MM-2

BYM300A120DN2HOSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time14 weeks
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-XUFM-X5
Number of components1
Phase1
Number of terminals5
Maximum operating temperature150 °C
Maximum output current450 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation1000 W
Certification statusNot Qualified
Maximum reverse recovery time0.55 µs
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
BYM 300 A 120 DN2
Diode Power Module
• Inside fast free-wheeling diode
• Package with insulated metal base plate
• Diode especially for brake choppers
• matched with BSM 300 GA 120 DN 2
Type
BYM 300 A 120 DN2
Maximum Ratings
Parameter
Diode reverse voltage
T
j
= 25 °C
DC current
T
C
= 25 °C
T
C
= 80 °C
V
R25
I
FDC
Package
SINGLE DIODE 1
Ordering Code
C67067-A2900-A70
1200V 450A
Symbol
V
R25
Values
1200
Unit
V
A
I
FDC
450
300
I
Fpuls
900
600
Pulsed diode current,
t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
i
2
t-value, Diode,
t
P
= 10 ms,
T
j
= 150 °C
Power dissipation per Diode
Chip temperature
Storage temperature
Thermal resistance, chip case
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
i
2
t
P
D
T
j
T
stg
R
thJC
V
is
-
-
-
-
42000
1000
+ 150
-40 ... + 125
0.125
2500
20
11
F
40 / 125 / 56
A
2
s
W
°C
K/W
Vac
mm
sec
1
Oct-27-1997

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