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ND171N14KHPSA1

Description
DIODE GP 1.4KV 104A BG-PB34-1
CategoryDiscrete semiconductor    diode   
File Size548KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

ND171N14KHPSA1 Overview

DIODE GP 1.4KV 104A BG-PB34-1

ND171N14KHPSA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionR-XUFM-X3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time8 weeks
Other featuresUL RECOGNIZED
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-XUFM-X3
Maximum non-repetitive peak forward current5600 A
Number of components1
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current171 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage1400 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
N
Netz-Dioden-Modul
Rectifier Diode Module
Datenblatt / Data sheet
DD171N
DD171N
DD171N..K..-A
DD171N..K..-K
ND171N
= -40°C... T
vj max
V
RRM
1200
1600
1300
1700
1400 V
1800 V
1500 V
1900 V
270 A
171 A
6.600 A
5.600 A
218.000 A²s
157.000 A²s
Elektrische Eigenschaften / Electrical properties
Kenndaten
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltages
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Elektrische Eigenschaften
T
Thermische Eigenschaften
vj
T
vj
= +25°C... T
vj max
V
RSM
I
FRMSM
T
C
= 100°C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
FAVM
I
FSM
I²t
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Isolations-Prüfspannung
insulation test voltage
T
vj
= T
vj max
, i
F
= 500 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
, v
R
= V
RRM
RMS, f = 50 Hz, t = 1 sec
RMS, f = 50 Hz, t = 1 min
v
F
V
(TO)
r
T
i
R
V
ISOL
max.
1,26 V
0,75 V
0,8 mΩ
max.
20 mA
3,0 kV
2,5 kV
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Modul / per Module, Θ = 180° sin
pro Zweig / per arm, Θ = 180° sin
pro Modul / per Module, DC
pro Zweig / per arm, DC
pro Modul / per Module
pro Zweig / per arm
R
thJC
max.
max.
max.
max.
max.
max.
0,130
0,260
0,126
0,252
°C/W
°C/W
°C/W
°C/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
R
thCH
T
vj max
T
c op
T
stg
0,03 °C/W
0,06 °C/W
150 °C
- 40...+150 °C
- 40...+150 °C
prepared by: A.Glunz
approved by: M.Leifeld
date of publication: 2016-01-28
revision:
3.1
IFBIP D AEC / 2016-01-28, A.Glunz
A 13/11
Seite/page
1/9
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