RGW60TS65D
650V 30A Field Stop Trench IGBT
Outline
Datasheet
V
CES
I
C (100℃)
V
CE(sat) (Typ.)
P
D
Features
650V
30A
1.5V
178W
TO-247N
(1)(2)(3)
Inner
Circuit
(2)
*1
(1)
(3)
1) Low Collector - Emitter Saturation Voltage
2) High Speed Switching
3) Low Switching Loss & Soft Switching
4) Built in Very Fast & Soft Recovery FRD
5) Pb - free Lead Plating ; RoHS Compliant
Applications
PFC
UPS
Welding
Solar Inverter
IH
Type
(1) Gate
(2) Collector
(3) Emitter
*1 Built in FRD
Packaging
Specifications
Packaging
Reel Size (mm)
Tape Width (mm)
Basic Ordering Unit (pcs)
Packing Code
Marking
Tube
-
-
450
C11
RGW60TS65D
Absolute
Maximum Ratings
(at T
C
= 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Gate - Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
*1 Pulse width limited by T
jmax
.
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© 2017 ROHM Co., Ltd. All rights reserved.
Symbol
V
CES
V
GES
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
I
C
I
C
I
CP
*1
Value
650
30
60
30
120
40
20
120
178
89
40
to +175
55
to +175
Unit
V
V
A
A
A
A
A
A
W
W
°C
°C
I
F
I
F
I
FP*1
P
D
P
D
T
j
T
stg
1/11
2017.10 - Rev.A
RGW60TS65D
Thermal
Resistance
Parameter
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
Symbol
R
θ(j-c)
R
θ(j-c)
Values
Min.
-
-
Typ.
-
-
Max.
0.84
1.62
Datasheet
Unit
°C/W
°C/W
IGBT
Electrical Characteristics
(at T
j
= 25°C unless otherwise specified)
Parameter
Collector - Emitter Breakdown
Voltage
Collector Cut - off Current
Symbol
Conditions
Values
Min.
650
Typ.
-
Max.
-
Unit
BV
CES
I
C
= 10μA, V
GE
= 0V
V
I
CES
V
CE
= 650V, V
GE
= 0V
-
-
10
μA
Gate - Emitter Leakage Current
Gate - Emitter Threshold
Voltage
I
GES
V
GE
=
30V,
V
CE
= 0V
-
-
200
nA
V
GE(th)
V
CE
= 5V, I
C
= 20.0mA
I
C
= 30A, V
GE
= 15V
5.0
6.0
7.0
V
Collector - Emitter Saturation
Voltage
V
CE(sat)
T
j
= 25°C
T
j
= 175°C
-
-
1.5
1.85
1.9
-
V
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© 2017 ROHM Co., Ltd. All rights reserved.
2/11
2017.10 - Rev.A
RGW60TS65D
IGBT
Electrical Characteristics
(at T
j
= 25°C unless otherwise specified)
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate - Emitter Charge
Gate - Collector Charge
Turn - on Delay Time
Rise Time
Turn - off Delay Time
Fall Time
Turn - on Switching Loss
Turn - off Switching Loss
Turn - on Delay Time
Rise Time
Turn - off Delay Time
Fall Time
Turn - on Switching Loss
Turn - off Switching Loss
Reverse Bias Safe Operating
Area
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Conditions
V
CE
= 30V
V
GE
= 0V
f = 1MHz
V
CE
= 400V
I
C
= 30A
V
GE
= 15V
I
C
= 30A, V
CC
= 400V
V
GE
= 15V, R
G
= 10Ω
T
j
= 25°C
Inductive Load
*E
on
includes diode
reverse recovery
I
C
= 30A, V
CC
= 400V
V
GE
= 15V, R
G
= 10Ω
T
j
= 175°C
Inductive Load
*E
on
includes diode
reverse recovery
I
C
= 120A, V
CC
= 520V
RBSOA V
P
= 650V, V
GE
= 15V
R
G
= 100Ω, T
j
= 175°C
FULL SQUARE
Values
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
2530
65
46
84
17
31
37
13
114
35
0.48
0.49
36
14
133
76
0.49
0.63
Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Datasheet
Unit
pF
nC
ns
mJ
ns
mJ
-
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© 2017 ROHM Co., Ltd. All rights reserved.
3/11
2017.10 - Rev.A
RGW60TS65D
FRD
Electrical Characteristics
(at T
j
= 25°C unless otherwise specified)
Parameter
Symbol
Conditions
I
F
= 20A
Diode Forward Voltage
V
F
T
j
= 25°C
T
j
= 175°C
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery
Charge
Diode Reverse Recovery Energy
t
rr
I
F
= 20A
V
CC
= 400V
di
F
/dt = 200A/μs
T
j
= 25°C
-
-
-
1.45
1.55
92
1.9
-
-
Values
Min.
Typ.
Max.
Datasheet
Unit
V
ns
I
rr
-
6.7
-
A
Q
rr
-
0.34
-
μC
E
rr
-
14.1
-
μJ
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery
Charge
Diode Reverse Recovery Energy
t
rr
I
F
= 20A
V
CC
= 400V
di
F
/dt = 200A/μs
T
j
= 175°C
-
123
-
ns
I
rr
-
7.8
-
A
Q
rr
-
0.59
-
μC
E
rr
-
30.7
-
μJ
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© 2017 ROHM Co., Ltd. All rights reserved.
4/11
2017.10 - Rev.A
RGW60TS65D
Electrical
Characteristic Curves
Datasheet
Fig.1 Power Dissipation vs. Case Temperature
200
180
Fig.2 Collector Current vs. Case Temperature
70
60
Power Dissipation: P
D
[W]
Collector Current : I
C
[A]
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
50
40
30
20
10
0
0
25
50
75
100
125
150
175
T
j
≦175ºC
V
GE
≧15V
Case Temperature : T
C
[ºC]
Case Temperature : T
C
[ºC]
Fig.3 Forward Bias Safe Operating Area
1000
1µs
Fig.4 Reverse Bias Safe Operating Area
160
140
Collector Current : I
C
[A]
100
10µs
10
100µs
1
Collector Current : I
C
[A]
120
100
80
60
40
20
0
T
j
≦175ºC
V
GE
≧15V
0
200
400
600
800
0.1
T
c
=25ºC
Single Pulse
1
10
100
1000
0.01
Collector To Emitter Voltage : V
CE
[V]
Collector To Emitter Voltage : V
CE
[V]
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© 2017 ROHM Co., Ltd. All rights reserved.
5/11
2017.10 - Rev.A
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