ZXTP08400BFF
400V, SOT23F, PNP medium power high voltage transistor
Summary;
BV
CEO
> -400V
BV
ECO
> -6V
I
C(cont)
= -0.2A
V
CE(sat)
< 220mV @ 100mA
P
D
= 1.5W
Complementary part number ZXTN08400BFF
Description
This PNP transistor has been designed for applications requiring high
blocking voltage. The SOT23F package is pin compatible with the
industry standard SOT23 footprint but offers lower profile and higher
dissipation for applications where power density is of utmost
importance.
C
B
Features
•
•
High voltage
Low saturation voltage
E
E
Applications
•
Telecoms switching
C
B
Ordering information
Device
ZXTP08400BFFTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity
per reel
3000
Pinout - top view
Device marking
1D6
Issue 1 - January 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com
ZXTP08400BFF
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current
(c)
Peak pulse current
Base current
Power dissipation at T
amb
=25°C
(a)
Linear derating factor
Power dissipation at T
amb
=25°C
(b)
Linear derating factor
Power dissipation at T
amb
=25°C
(c)
Linear derating factor
Power dissipation at T
amb
=25°C
(d)
Linear derating factor
Operating and storage temperature range
P
D
T
j
, T
stg
P
D
P
D
P
D
Symbol
V
CBO
V
CEO
V
ECO
V
EBO
I
C
I
CM
I
B
Limit
-400
-400
-6
-7
-0.2
-1
-0.2
0.84
6.72
1.34
10.72
1.50
12.0
2.0
16.0
-55 to 150
Unit
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistamce
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(c)
Junction to ambient
(d)
Symbol
R
JA
R
JA
R
JA
R
JA
Limit
149
93
83
60
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 1 - January 2007
© Zetex Semiconductors plc 2007
2
www.zetex.com
ZXTP08400BFF
Characteristics
Issue 1 - January 2007
© Zetex Semiconductors plc 2007
3
www.zetex.com
ZXTP08400BFF
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (reverse blocking)
Emitter-collector breakdown
voltage (base open)
Symbol
BV
CBO
BV
CEO
BV
EBO
BV
ECX
BV
ECO
Min.
-400
-400
-7
-6
-6
Typ.
-500
-480
-8.1
-8.2
-8.6
<-1
<-1
-10
-95
-140
-140
Base-emitter saturation
voltage
V
BE(sat)
-810
-705
100
100
100
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f
T
C
obo
t
d
t
r
t
s
t
f
50
220
200
200
70
12.9
95
73.8
1790
153.8
300 s; duty cycle
2%.
Max.
Unit Conditions
V
V
V
V
V
I
C
= -100 A
I
C
= -10mA
(*)
I
E
= -100 A
I
E
= -100 A, R
BC
< 1k
0.25V > V
BC
> -0.25V
I
E
= -100 A,
V
CB
= -320V
V
CB
= -320V, T
amb
= 100°C
V
EB
= -5.6V
I
C
= -20mA, I
B
= -1mA
(*)
I
C
= -50mA, I
B
= -5mA
(*)
I
C
= -100mA, I
B
= -10mA
(*)
I
C
= -200mA, I
B
= -40mA
(*)
I
C
= -200mA, I
B
= -40mA
(*)
I
C
= -200mA, V
CE
= -10V
(*)
I
C
= -1mA, V
CE
= -5V
(*)
or
Collector-base cut-off current I
CBO
Emitter-base cut-off current
Collector-emitter saturation
voltage
I
EBO
V
CE(sat)
-50
-20
-50
-145
-125
-220
-190
-900
-800
nA
A
nA
mV
mV
mV
mV
mV
mV
Base-emitter turn-on voltage V
BE(on)
Static forward current
transfer ratio
h
FE
300
I
C
= -50mA, V
CE
= -5V
(*)
I
C
= -200mA, V
CE
= -10V
(*)
MHz I
C
= -20mA, V
CE
= -20V
f = 20MHz
20
pF
ns
ns
ns
ns
V
CB
= -20V, f = 1MHz
(*)
V
CC
= -100V.
I
C
= -100mA,
I
B1
= 10mA, I
B2
= -20mA.
NOTES:
(*) Measured under pulsed conditions. Pulse width
Issue 1 - January 2007
© Zetex Semiconductors plc 2007
4
www.zetex.com
ZXTP08400BFF
Typical characteristics
Issue 1 - January 2007
© Zetex Semiconductors plc 2007
5
www.zetex.com
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