ZXTP07040DFF
40V, SOT23F, PNP medium power transistor
Summary;
BV
CEO
> -40V
BV
ECO
> -3V
I
C(cont)
= -3A
V
CE(sat)
< -100mV @ 1A
R
CE(sat)
= 67m
P
D
= 1.5W
Complementary part number ZXTN07045EFF
Description
This low voltage PNP transistor has been designed for applications
requiring high gain and very low saturation voltage. The SOT23F
package is pin compatible with the industry standard SOT23 footprint
but offers lower profile and higher dissipation for applications where
power density is of utmost importance.
C
B
Features
•
•
•
•
Low profile SOT23F package
Low saturation voltage
High Gain
High power dissipation
E
E
C
B
Pinout - top view
Applications
•
•
•
•
•
Load switches
Battery charging
Siren driver
MOSFET and IGBT gate driver
Motor drive
Ordering information
Device
ZXTP07040DFFTA
Reel size
(inches)
7
Tape width
(mm)
8
Quantity
per reel
3000
Device marking
1D2
Issue 1 - September 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com
ZXTP07040DFF
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current
(c)
Peak pulse current
Base current
Power dissipation at T
amb
=25°C
(a)
Linear derating factor
Power dissipation at T
amb
=25°C
(b)
Linear derating factor
Power dissipation at T
amb
=25°C
(c)
Linear derating factor
Power dissipation at T
amb
=25°C
(d)
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
P
D
P
D
P
D
Symbol
V
CBO
V
CEO
V
ECO
V
EBO
I
C
I
CM
I
B
P
D
Limit
-50
-40
-3
-7
-3
-6
-1
0.84
6.72
1.34
10.72
1.50
12.0
2.0
16.0
-55 to 150
Unit
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(c)
Junction to ambient
(d)
Symbol
R
JA
R
JA
R
JA
R
JA
Limit
149
93
83
60
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 1 - September 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com
ZXTP07040DFF
Characteristics
Issue 1 - September 2006
© Zetex Semiconductors plc 2006
3
www.zetex.com
ZXTP07040DFF
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (reverse blocking)
Symbol
BV
CBO
BV
CEO
BV
EBO
BV
ECO
Min.
-50
-40
-7
-3
Typ.
-80
-65
-8.3
-8.6
<-1
-50
-20
Emitter-base cut-off current
Collector-emitter saturation
voltage
I
EBO
V
CE(sat)
<-1
-110
-80
-230
-310
-250
Base-emitter saturation
voltage
Base-emitter turn-on voltage
Static forward current
transfer ratio
V
BE(sat)
V
BE(on)
h
FE
300
250
200
80
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f
T
C
obo
t
d
t
r
t
s
t
f
100
-935
-825
450
380
330
160
200
30
20.7
12.2
375
72
300 s; duty cycle
2%.
Max.
Unit Conditions
V
V
V
V
nA
A
nA
mV
mV
mV
mV
mV
mV
mV
I
C
= -100 A
I
C
= -10mA
(*)
I
E
= -100 A
I
E
= -100 A
V
CB
= -36V
V
CB
= -36V, T
amb
= 100°C
V
EB
= -5.6V
I
C
= -0.5A, I
B
= -5mA
(*)
I
C
= -1A, I
B
= -100mA
(*)
I
C
= -1A, I
B
= -10mA
(*)
I
C
= -2A, I
B
= -40mA
(*)
I
C
= -3A, I
B
= -150mA
(*)
I
C
= -3A, I
B
= -150mA
(*)
I
C
= -3A, V
CE
= -2V
(*)
I
C
= -10mA, V
CE
= -2V
(*)
I
C
= -0.5A, V
CE
= -2V
(*)
I
C
= -1A, V
CE
= -2V
(*)
I
C
= -3A, V
CE
= -2V
(*)
MHz I
C
= -50mA, V
CE
= -5V
f = 50MHz
Collector-base cut-off current I
CBO
-50
-180
-100
-400
-540
-390
-1040
-930
800
40
pF
ns
ns
ns
ns
V
CB
= -10V, f = 1MHz
(*)
V
CC
= -10V,
I
C
= -500mA,
I
B1
= I
B2
= -50mA
NOTES:
(*) Measured under pulsed conditions. Pulse width
Issue 1 - September 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
ZXTP07040DFF
Typical characteristics
Issue 1 - September 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
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