Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering, 10s)(µMAX only) ............. +300°C
Soldering Temperature (reflow) .......................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Thermal Characteristics
(Note 1)
WLP
Junction-to-Ambient Thermal Resistance (θ
JA
) ..........75°C/W
µMAX
Junction-to-Ambient Thermal Resistance (θ
JA
) .....206.3°C/W
Junction-to-Case Thermal Resistance (θ
JC
) ...............42°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Electrical Characteristics
(V
RS+
= V
RS-
= +76V, V
DD
= +3.3V, V
SENSE
= V
RS+
- V
RS-
= 1mV, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are
at T
A
=+25°C.) (Note 2)
PARAMETER
DC CHARACTERISTICS
Supply Voltage
Supply Current
Power-Supply Rejection
Ratio
Input Common-Mode
Voltage Range
Input Bias Current at V
RS+
and V
RS-
(Note 3)
Input Offset Current
(Note 3)
Input Leakage Current
(Note 3)
Common-Mode Rejection
Ratio
Input Offset Voltage
(Note 3)
Input Offset Voltage Drift
(Note 3)
V
DD
I
DD
PSRR
V
CM
I
RS+
, I
RS-
I
RS+
-
I
RS-
I
RS+
, I
RS-
CMRR
V
OS
TCV
OS
V
DD
= 0V, V
RS+
= 76V
4.5V < V
RS+
< 76V
T
A
= +25°C
-40
°
C ≤ T
A
≤ +125°C
125
140
±12
±25
130
Guaranteed by PSRR
T
A
= +25°C
-40°C < T
A
< +125°C
2.7V
≤
V
DD
≤ 5.5V
Guaranteed by CMRR
110
2.7
120
76
65
1100
6
2.7
5.5
1300
1500
V
µA
dB
V
µA
nA
µA
dB
µV
nV/°C
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
www.maximintegrated.com
Maxim Integrated │
2
MAX44285
Dual-Channel, High-Precision,
High-Voltage, Current-Sense Amplifier
Electrical Characteristics (continued)
(V
RS+
= V
RS-
= +76V, V
DD
= +3.3V, V
SENSE
= V
RS+
- V
RS-
= 1mV, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are
at T
A
=+25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MAX44285L (G = 12.5V/V)
Input Sense Voltage
V
SENSE
MAX44285T (G = 20V/V)
MAX44285F (G = 50V/V)
MAX44285H (G = 100V/V)
Full-scale V
SENSE
= 200mV
Gain (Note 4)
G
Full-scale V
SENSE
= 125mV
Full-scale V
SENSE
= 50mV
Full-scale V
SENSE
= 25mV
T
A
= +25°C
Gain Error (Note 3)
Output Resistance
Output Low Voltage
Output High Voltage
AC CHARACTERISTICS
Signal Bandwidth
AC Power-Supply
Rejection Ratio
AC CMRR
Output Transient Recovery
Time
Capacitive Load Stability
Input Voltage-Noise
Density
Total Harmonic Distortion
(Up to 7th Harmonics)
Power-Up Time (Note 5)
Saturation Recovery Time
C
LOAD
e
n
THD
BW -3dB
AC PSRR
AC CMRR
All gain configurations V
SENSE
> 5mV
f = 200kHz
f = 200kHz
1mV sine wave
20mV sine wave
80
40
54
47
2
20
200
45
63
MIN
TYP
200
125
50
25
12.5
20
50
100
MAX
UNITS
mV
V/V
0.1
0.3
0.5
0.1
mΩ
15
4
V
DD
-
0.015
mV
V
%
GE
R
OUT
V
OL
V
OH
-40°C ≤ T
A
≤ +85°C
-40°C ≤ T
A
≤ +125°C
Sink 500µA
No load
Source 500µA
kHz
dB
dB
µs
nF
pF
nV/√
Hz
dB
∆V
OUT
= 2V
P-P
, 14-bit settling with 400Ω
and 1nF, 6nF ADC sampling capacitor
With 250Ω isolation resistor
Without any isolation resistor
f = 1kHz
f = 1kHz, V
OUT
= 1V
P-P
200
10
µs
µs
Note 2:
All devices are 100% production tested at T
A
= +25°C. All temperature limits are guaranteed by design.
Note 3:
Specifications are guaranteed by design, not production tested.
Note 4:
Gain and offset voltage are calculated based on two point measurements: V
[i=s]This post was last edited by damiaa on 2021-11-20 10:07[/i][Free trial of Pingtouge Bluetooth Mesh Gateway Development Kit] + Gateway module to cloud platform and problem solving
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