NCP729
200 mA Ultra-Low Noise
Very-Low Iq, High PSRR,
LDO Linear Voltage
Regulator
The NCP729 is a 200 mA LDO suitable to provide clean analog
power supply rails for noise sensitive applications. This device
features Ultra−Low Noise performance, High Power Supply Rejection
Ratio and Very good transient response characteristics. Very Low
Dropout and Very Low Quiescent Current makes this LDO an
attractive choice for wide range of battery powered, portable products.
Current Limit and Thermal Shutdown provide protection during
failure conditions. NCP729 is available in 1.06 mm x 1.06 mm Chip
Scale Package and it is stable with small 1
mF
Ceramic capacitors.
Features
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4 BUMP CSP
FC SUFFIX
CASE 568AD
DEVICE MARKING INFORMATION
A1
XXX
YWW
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Operating Input Voltage Range: 2.0 V to 5.5 V
Fixed Voltage Options Available: 0.8 V to 3.5 V
Very Low Quiescent Current: Max. 50
mA
over Temperature
Ultra Low Noise: 10
mV
RMS
from 100 Hz to 100 kHz
Very Low Dropout: 86 mV Typical at 200 mA
±2%
Accuracy over Full Load, Line and Temperature Variations
High PSRR: 72 dB at 1 kHz
Thermal Shutdown and Current Limit Protections
Stable with a 1
mF
Ceramic Output Capacitor
Available in 1.06 mm x 1.06 mm 4−bump CSP Package
Active Output Discharge for Fast Turn−Off
These are Pb−free Devices
XXX = Specific Device Code
Y
= Year
WW = Work Week
PIN CONNECTIONS
EN
A1
B1
GND OUT
(Top View)
IN
A2
B2
Typical Applications
PDAs, Tablets, GPS, Smartphones
Wireless Handsets, Wireless LAN, Bluetooth, Zigbee
Portable Medical Equipment
Other Battery Powered Applications
V
IN
C
IN
OFF
V
OUT
C
OUT
1
mF
Ceramic
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
IN
ON
EN
NCP729
GND
OUT
Figure 1. Typical Application Schematic
©
Semiconductor Components Industries, LLC, 2013
April, 2013
−
Rev. 2
1
Publication Order Number:
NCP729/D
NCP729
IN
EN
BANDGAP
REFERENCE
ENABLE
LOGIC
UVLO
THERMAL
SHUTDOWN
MOSFET
DRIVER WITH
CURRENT LIMIT
AUTO LOW
POWER MODE
OUT
ACTIVE
DISCHARGE
EEPROM
GND
EN
Figure 2. Simplified Schematic Block Diagram
Table 1. PIN FUNCTION DESCRIPTION
Pin No.
4−bump CSP
B2
B1
A1
A2
Pin Name
OUT
GND
EN
IN
Description
Regulated output voltage pin. A small 1
mF
ceramic capacitor is needed from this pin to ground
to assure stability.
Power supply ground. Soldered to large copper plane allows for better heat dissipation.
Enable pin. Driving EN over 0.9 V turns on the regulator. Driving EN below 0.4 V puts the regu-
lator into shutdown mode.
Input pin. A small capacitor is needed from this pin to ground to assure stability.
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating
Input Voltage (Note 1)
Output Voltage
Enable Input
Output Short Circuit Duration
Maximum Junction Temperature
Storage Temperature
ESD Capability, Human Body Model (Note 2)
ESD Capability, Machine Model (Note 2)
Symbol
V
IN
V
OUT
V
EN
t
SC
T
J(MAX)
T
STG
ESD
HBM
ESD
MM
Value
−0.3
V to 6 V
−0.3
V to V
IN
+ 0.3 V
−0.3
V to V
IN
+ 0.3 V
∞
150
−55
to 150
2000
200
Unit
V
V
V
s
°C
°C
V
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115)
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
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2
NCP729
Table 3. THERMAL CHARACTERISTICS
Rating
Thermal Characteristics, 4−bump CSP package
Thermal Resistance, Junction−to−Air (Note 3)
Thermal Resistance, Junction−to−Air (Note 4)
Symbol
R
qJA
Value
90
157
Unit
°C/W
3. Specified according to JEDEC 51.7 4−Layer Board.
4. Single component mounted on 4−Layer Board, 480 mm
2
, Top Layer thickness: 1 oz, Cu Area: 100 mm
2
.
Table 4. ELECTRICAL CHARACTERISTICS
−40°C
≤
T
J
≤
125°C; V
IN
= V
OUT(NOM)
+ 0.3 V or 2.0 V, whichever is greater; I
OUT
=
10 mA, C
IN
= C
OUT
= 1
mF
unless otherwise noted. Typical values are at T
J
= +25°C. (Note 5)
Parameter
Operating Input Voltage
Output Voltage Accuracy
Line Regulation
Load Regulation
Dropout Voltage (Note 6)
V
OUT
+ 0.3 V
≤
V
IN
≤
5.5 V
0 mA
≤
I
OUT
≤
200 mA
V
OUT
+ 0.3 V
≤
V
IN
≤
5.5 V
I
OUT
= 0 mA to 200 mA
V
DO
= V
IN
– (V
OUT(NOM)
– 100 mV)
I
OUT
= 200 mA
V
OUT
= 1.8 V
V
OUT
= 2.5 V
V
OUT
= 2.6 V
V
OUT
= 2.8 V
V
OUT
= 2.85 V
V
OUT
= 3.0 V
V
OUT
= 3.3 V
Test Conditions
Symbol
V
IN
V
OUT
Reg
LINE
Reg
LOAD
V
DO
Min
2.0
−2
150
2
170
100
90
80
80
70
65
35
255
155
0.3
250
250
0.9
0.4
100
150
74
72
56
10
±20
DV
OUT
UVLO
T
SD
T
SDH
−
1.3
±80
1.6
165
20
−
1.9
500
nA
ms
dB
400
400
220
140
130
120
120
110
100
50
300
200
1
530
530
Typ
Max
5.5
+2
Unit
V
%
mV/V
mV/mA
mV
Quiescent Current
Ground Current
Disable Current
Output Current Limit
Output Short Circuit Current
EN Pin Threshold Voltage
High Threshold
Low Threshold
EN Pin Input Current
Turn−on Time
Power Supply Rejection Ratio
I
OUT
= 0 mA
I
OUT
= 200 mA
V
EN
= 0 V
V
OUT
= V
OUT(NOM)
– 100 mV
V
OUT
= 0 V
V
EN
Voltage increasing
V
EN
Voltage decreasing
V
EN
= 5.5 V
V
OUT
= 0 V to 98% V
OUT(NOM)
,
after assertion of the EN
V
IN
= 3.8 V, V
OUT
= 3.3 V
V
PP
= 100 mV
I
OUT
= 200 mA
V
OUT
= 1.8 V, I
OUT
= 200 mA
f = 100 Hz to 100 kHz
V
OUT
+ 0.3 V
≤
V
IN
≤
V
OUT
+ 1.3 V or
V
OUT
+ 0.3 V
≤
V
IN
≤
V
OUT
+ 1.3 V in 1
ms
I
OUT
= 1 mA to 200 mA or
I
OUT
= 200 mA to 1 mA in 1
ms
V
IN
rising from 0 V to 5.5 V
Temperature increasing from T
J
= +25°C
Temperature falling from T
SD
f = 100 Hz
f = 1 kHz
f = 10 kHz
V
OUT
< 1.8 V
V
OUT
≥
1.8 V
I
Q
I
GND
I
DIS
I
OUT
I
SC
V
EN_HI
V
EN_LO
I
EN
t
ON
PSRR
mA
mA
mA
mA
mA
V
Output Noise Voltage
Line Transient
Load Transient
Undervoltage Lock−out
Thermal Shutdown Temperat-
ure
Thermal Shutdown Hysteresis
V
N
mV
rms
mV
mV
V
°C
°C
5. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at T
J
= T
A
=
25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
6. Characterized when V
OUT
falls 100 mV below the regulated voltage at V
IN
= V
OUT(NOM)
+ 0.3 V.
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NCP729
TYPICAL CHARACTERISTICS
OUTPUT VOLTAGE NOISE (mV/rtHz)
OUTPUT VOLTAGE NOISE (mV/rtHz)
10
V
IN
= 2.0 V,
V
OUT
= 0.8 V,
C
IN
= C
OUT
= 1
mF,
T
A
= 25°C
I
OUT
= 10 mA
I
OUT
= 1 mA
I
OUT
= 200 mA
10
V
IN
= 3.6 V,
V
OUT
= 3.3 V,
C
IN
= C
OUT
= 1
mF,
T
A
= 25°C
I
OUT
= 10 mA
I
OUT
= 1 mA
I
OUT
= 200 mA
1
1
0.1
0.1
0.01
0.01
0.001
10
100
1K
10 K
100 K
1M
10 M
0.001
10
100
1K
10 K
100 K
1M
10 M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 3. Output Voltage Noise,
V
OUT
= 0.8 V, C
OUT
= 1
mF
80
70
60
PSRR (dB)
50
40
30
20
10
0
10
V
IN
= 2.3 V,
V
OUT
= 1.8 V,
C
IN
= none,
C
OUT
= 1
mF,
T
A
= 25°C
100
1K
I
OUT
= 100 mA
I
OUT
= 200 mA
I
OUT
= 1 mA
I
OUT
= 10 mA
PSRR (dB)
90
80
70
60
50
40
30
20
10
0
10
Figure 4. Output Voltage Noise,
V
OUT
= 3.3 V, C
OUT
= 1
mF
I
OUT
= 1 mA
I
OUT
= 10 mA
V
IN
= 3.3 V,
V
OUT
= 2.8 V,
C
IN
= none,
C
OUT
= 1
mF,
T
A
= 25°C
100
1K
I
OUT
= 100 mA
I
OUT
= 200 mA
10 K
100 K
1M
10 M
10 K
100 K
1M
10 M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 5. PSRR, V
OUT
= 1.8 V, C
OUT
= 1
mF
90
80
70
PSRR (dB)
60
50
40
30
20
10
0
10
V
IN
= 3.8 V,
V
OUT
= 3.3 V,
C
IN
= none,
C
OUT
= 1
mF,
T
A
= 25°C
100
1K
I
OUT
= 100 mA
I
OUT
= 200 mA
I
OUT
= 1 mA
I
OUT
= 10 mA
PSRR (dB)
90
80
70
60
50
40
30
20
10
0
10
Figure 6. PSRR, V
OUT
= 2.8 V, C
OUT
= 1
mF
I
OUT
= 1 mA
I
OUT
= 10 mA
V
IN
= 3.8 V,
V
OUT
= 3.3 V,
C
IN
= none,
C
OUT
= 4.7
mF,
T
A
= 25°C
100
I
OUT
= 100 mA
I
OUT
= 200 mA
10 K
100 K
1M
10 M
1K
10 K
100 K
1M
10 M
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 7. PSRR, V
OUT
= 3.3 V, C
OUT
= 1
mF
Figure 8. PSRR, V
OUT
= 3.3 V, C
OUT
= 4.7
mF
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NCP729
TYPICAL CHARACTERISTICS
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
200
GROUND CURRENT (mA)
C
IN
= 1
mF,
C
OUT
= 1
mF,
V
OUT
= 0.8 V,
V
IN
= 2.0 V
T
A
= 125°C
T
A
= 25°C
T
A
=
−40°C
180
160
140
120
100
80
60
40
20
0
C
IN
= 1
mF,
C
OUT
= 1
mF,
V
OUT
= 3.3 V,
V
IN
= 3.6 V
T
A
= 25°C
T
A
=
−40°C
GROUND CURRENT (mA)
T
A
= 125°C
0.001
0.01
0.1
1
10
100
1000
0.001
0.01
0.1
1
10
100
1000
OUTPUT CURRENT (mA)
OUTPUT CURRENT (mA)
Figure 9. Ground Current vs. Output Current,
V
OUT
= 0.8 V
50
QUIESCENT CURRENT (mA)
45
40
35
30
25
20
C
IN
= 1
mF,
C
OUT
= 1
mF,
V
OUT(NOM)
= 0.8 V,
I
OUT
= 0 mA
T
A
= 125°C
T
A
= 25°C
T
A
=
−40°C
50
QUIESCENT CURRENT (mA)
45
40
35
30
25
20
15
10
Figure 10. Ground Current vs. Output Current,
V
OUT
= 3.3 V
C
IN
= 1
mF,
C
OUT
= 1
mF,
V
OUT(NOM)
= 3.3 V,
I
OUT
= 0 mA
T
A
= 125°C
T
A
= 25°C
T
A
=
−40°C
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
INPUT VOLTAGE (V)
INPUT VOLTAGE (V)
Figure 11. Quiescent Current vs. Input Voltage,
V
OUT
= 0.8 V
220
200
DROPOUT VOLTAGE (mV)
180
160
140
120
100
80
60
40
20
0
T
A
=
−40°C
C
IN
= 1
mF,
C
OUT
= 1
mF,
V
OUT(NOM)
= 1.8 V
120
T
A
= 125°C
DROPOUT VOLTAGE (mV)
T
A
= 25°C
110
100
90
80
70
60
50
40
0
Figure 12. Quiescent Current vs. Input
Voltage, V
OUT
= 3.3 V
C
IN
= 1
mF,
C
OUT
= 1
mF,
V
OUT(NOM)
= 2.8 V
T
A
= 125°C
T
A
= 25°C
T
A
=
−40°C
0
25
50
75
100
125
150
175
200
25
50
75
100
125
150
175 200
OUTPUT CURRENT (mA)
OUTPUT CURRENT (mA)
Figure 13. Dropout Voltage vs. Output Current,
V
OUT
= 1.8 V
Figure 14. Dropout Voltage vs. Output Current,
V
OUT
= 2.8 V
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Embedded System
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