Composite Transistors
XP2501
Silicon NPN epitaxial planer transistor
Unit: mm
2.1±0.1
0.425
1.25±0.1
0.425
0.2±0.05
0.12
– 0.02
+0.05
For general amplification
0.65
s
Features
q
q
Two elements incorporated into one package.
(Base-coupled transistors)
Reduction of the mounting area and assembly cost by one half.
2.0±0.1
1
2
3
5
0.65
4
0.9± 0.1
q
2SD601A
×
2 elements
0.7±0.1
s
Basic Part Number of Element
0.2
0 to 0.1
0.2±0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Rating
Emitter to base voltage
of
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
60
50
7
100
200
150
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
1 : Emitter (Tr1)
2 : Base
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
Marking Symbol:
5W
Internal Connection
1
2
3
4
Tr1
5
Tr2
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
(Ta=25˚C)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
h
FE
(small/large)
*1
V
CE(sat)
f
T
C
ob
Conditions
I
C
= 10µA, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 20V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
CE
= 10V, I
C
= 2mA
V
CE
= 10V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= –1mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
160
0.5
0.99
0.1
150
3.5
0.3
V
MHz
pF
min
60
50
7
0.1
100
460
typ
max
Unit
V
V
V
µA
µA
Ratio between 2 elements
1
Composite Transistors
P
T
— Ta
250
60
Ta=25˚C
I
B
=160µA
XP2501
I
C
— V
CE
1200
V
CE
=10V
Ta=25˚C
1000
I
B
— V
BE
Total power dissipation P
T
(mW)
Collector current I
C
(mA)
200
50
40
Base current I
B
(
µA
)
140µA
120µA
100µA
30
80µA
20
60µA
40µA
10
20µA
800
150
600
100
400
50
200
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
0
0
0.2
0.4
0.6
0.8
1.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
I
C
— V
BE
240
V
CE
=10V
200
200
240
V
CE
=10V
Ta=25˚C
I
C
— I
B
100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
30
10
3
1
0.3
0.1
0.03
0.01
0.1
25˚C
Ta=75˚C
Collector current I
C
(mA)
160
Collector current I
C
(mA)
160
120
Ta=75˚C
80
25˚C
120
–25˚C
80
40
40
–25˚C
0
0
0.4
0.8
1.2
1.6
2.0
0
0
200
400
600
800
1000
0.3
1
3
10
30
100
Base to emitter voltage V
BE
(V)
Base current I
B
(
µA
)
Collector current I
C
(mA)
h
FE
— I
C
600
V
CE
=10V
300
f
T
— I
E
240
NV — I
C
V
CB
=10V
Ta=25˚C
V
CE
=10V
G
V
=80dB
200 Function=FLAT
Ta=25˚C
160
Forward current transfer ratio h
FE
500
Transition frequency f
T
(MHz)
400
Ta=75˚C
25˚C
180
Noise voltage NV (mV)
240
300
–25˚C
120
R
g
=100kΩ
120
200
80
22kΩ
4.7kΩ
100
60
40
0
0.1
0.3
1
3
10
30
100
0
–0.1 –0.3
–1
–3
–10
–30
–100
0
10
20 30 50
100
200 300 500 1000
Collector current I
C
(mA)
Emitter current I
E
(mA)
Collector current I
C
(
µA
)
2
京公网安备 11010802033920号
EEWORLD
