Composite Transistors
XN6543
Silicon NPN epitaxial planer transistor
Unit: mm
For low-noise amplification (2GHz band)
0.65±0.15
6
0.95
2.8
–0.3
+0.2
+0.25
1.5
–0.05
0.65±0.15
1
0.3
–0.05
0.5
–0.05
2.9
–0.05
q
q
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
1.9±0.1
+0.2
s
Features
5
2
0.95
4
3
1.1
–0.1
q
2SC3904
×
2 elements
0.4±0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of
element Emitter to base voltage
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
15
10
2
65
200
150
–55 to +150
Unit
V
V
V
mA
mW
˚C
˚C
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol:
9Y
Internal Connection
6
5
4
Tr1
1
2
3
Tr2
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
Transition frequency
Collector output capacitance
Forward transfer gain
Power gain
Noise figure
*1
(Ta=25˚C)
Symbol
I
CBO
I
EBO
h
FE
h
FE
(small/large)
*1
f
T
C
ob
| S
21e
|
2
GUM
NF
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 8V, I
C
= 20mA
V
CE
= 8V, I
C
= 20mA
V
CE
= 8V, I
C
= 20mA
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 8V, I
C
= 20mA, f = 1.5GHz
V
CE
= 8V, I
C
= 20mA, f = 1.5GHz
V
CE
= 8V, I
C
= 7mA, f = 1.5GHz
7
50
0.5
7.0
120
0.99
8.5
0.6
9
10
2.2
3.0
1.0
GHz
pF
dB
dB
dB
min
typ
max
1
1
300
Unit
µA
µA
Ratio between 2 elements
0 to 0.05
0.1 to 0.3
0.8
0.16
–0.06
s
Basic Part Number of Element
+0.2
+0.1
1.45±0.1
+0.1
+0.1
1
Composite Transistors
P
T
— Ta
240
XN6543
I
C
— V
CE
30
Ta=25˚C
I
B
=250µA
120
V
CE
=8V
100
I
C
— V
BE
Total power dissipation P
T
(mW)
200
25
Collector current I
C
(mA)
Collector current I
C
(mA)
160
20
200µA
80
Ta=75˚C
25˚C
120
15
150µA
60
–25˚C
80
10
100µA
40
40
5
50µA
20
0
0
40
80
120
160
0
0
2
4
6
8
10
12
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
10
h
FE
— I
C
I
C
/I
B
=10
240
V
CE
=8V
12
f
T
— I
C
V
CE
=8V
f=1.5GHz
Ta=25˚C
Collector to emitter saturation voltage V
CE(sat)
(V)
Forward current transfer ratio h
FE
200
Ta=75˚C
Transition frequency f
T
(GHz)
10
30
100
10
1
160
8
0.1
Ta=75˚C
25˚C
–25˚C
120
25˚C
80
–25˚C
40
6
4
0.01
2
0.001
0.1
0.3
1
3
10
30
100
0
0.1
0.3
1
3
0
1
3
10
30
100
Collector current I
C
(mA)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
1.2
GUM — I
C
f=1MHz
I
E
=0
Ta=25˚C
NF — I
C
V
CE
=8V
f=1.5GHz
Ta=25˚C
6
V
CE
=8V
f=1.5GHz
Ta=25˚C
12
Collector output capacitance C
ob
(pF)
1.0
10
5
Power gain GUM (dB)
Noise figure NF (dB)
0.8
8
4
0.6
6
3
0.4
4
2
0.2
2
1
0
1
3
10
30
100
0
0.1
0.3
1
3
10
30
100
0
0.1
0.3
1
3
10
30
100
Collector to base voltage V
CB
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
2
Embedded System
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