Composite Transistors
XN6534
Silicon NPN epitaxial planer transistor
Unit: mm
For high-frequency amplification
0.65±0.15
6
+0.2
2.8
–0.3
1.5
–0.05
+0.25
0.65±0.15
1
0.3
–0.05
0.95
2.9
–0.05
q
q
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
1.9±0.1
+0.2
5
2
0.95
4
3
q
2SC2404
×
2 elements
1.1
–0.1
0.4±0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of
Emitter to base voltage
element
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
30
20
3
15
200
150
–55 to +150
Unit
V
V
V
mA
mW
˚C
˚C
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol:
7F
Internal Connection
6
5
4
Tr1
1
2
3
Tr2
s
Electrical Characteristics
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Forward current transfer h
FE
ratio
Base to emitter voltage
Common emitter reverse transfer capacitance
Transition frequency
Noise figure
Power gain
*1
(Ta=25˚C)
Symbol
V
CBO
V
EBO
h
FE
h
FE
(small/large)
*1
V
BE
C
re
f
T
NF
PG
Conditions
I
C
= 10µA, I
E
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 6V, I
E
= –1mA
V
CB
= 6V, I
E
= –1mA
V
CB
= 6V, I
E
= –1mA
V
CB
= 6V, I
E
= –1mA, f = 10.7MHz
V
CB
= 6V, I
E
= –1mA, f = 200MHz
V
CB
= 6V, I
E
= –1mA, f = 100MHz
V
CB
= 6V, I
E
= –1mA, f = 100MHz
450
min
30
3
40
0.5
0.99
720
0.8
650
3.3
24
1
mV
pF
MHz
dB
dB
260
typ
max
Unit
V
V
Ratio between 2 elements
0 to 0.05
0.1 to 0.3
0.8
0.16
–0.06
+0.2
s
Basic Part Number of Element
+0.1
1.45±0.1
s
Features
0.5
–0.05
+0.1
+0.1
1
Composite Transistors
P
T
— Ta
500
XN6534
I
C
— V
CE
12
Ta=25˚C
I
B
=100µA
10
12
V
CE
=6V
Ta=25˚C
I
C
— I
B
Total power dissipation P
T
(mW)
Collector current I
C
(mA)
8
80µA
Collector current I
C
(mA)
400
10
8
300
60µA
6
40µA
4
20µA
2
6
200
4
100
2
0
0
40
80
120
160
0
0
4
8
12
16
0
0
40
80
120
160
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base current I
B
(
µA
)
I
C
— V
BE
30
100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
V
CE
=6V
I
C
/I
B
=10
360
h
FE
— I
C
V
CE
=6V
25
25˚C
Ta=75˚C
–25˚C
30
10
3
1
0.3
25˚C
0.1
0.03
0.01
0.1
Ta=75˚C
–25˚C
Forward current transfer ratio h
FE
300
Collector current I
C
(mA)
20
240
Ta=75˚C
25˚C
120
–25˚C
15
180
10
5
60
0
0
0.4
0.8
1.2
1.6
2.0
0.3
1
3
10
30
100
0
0.1
0.3
1
3
10
30
100
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
f
T
— I
E
1200
120
Z
rb
— I
E
Common emitter reverse transfer capacitance C
re
(pF)
2.4
C
re
— V
CE
V
CB
=6V
f=2MHz
Ta=25˚C
I
C
=1mA
f=10.7MHz
Ta=25˚C
Reverse transfer impedance Z
rb
(
Ω
)
V
CB
=6V
Ta=25˚C
Transition frequency f
T
(MHz)
1000
100
2.0
800
80
1.6
600
60
1.2
400
40
0.8
200
20
0.4
0
–0.1 –0.3
–1
–3
–10
–30
–100
0
–0.1
–0.3
–1
–3
–10
0
0.1
0.3
1
3
10
30
100
Emitter current I
E
(mA)
Emitter current I
E
(mA)
Collector to emitter voltage V
CE
(V)
2
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