Composite Transistors
XN1111
Silicon PNP epitaxial planer transistor
Unit: mm
For switching/digital circuits
2.8
-0.3
0.65±0.15
+0.2
+0.25
1.5
-0.05
5
0.65±0.15
1
0.95
2.9
-0.05
q
q
Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half.
1.9±0.1
+0.2
4
0.95
3
2
0.3
-0.05
0.4±0.2
0.16
-0.06
+0.1
1.1
-0.1
q
UN1111
×
2 elements
0.8
s
Basic Part Number of Element
+0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Rating
Collector to emitter voltage
of
element Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
–50
–50
–100
300
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
0 to 0.1
0.1 to 0.3
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol:
9S
Internal Connection
5
4
3
2
Tr1
1
Tr2
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
Resistance ratio
*1
(Ta=25˚C)
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
h
FE
(small/large)
*1
V
CE(sat)
V
OH
V
OL
f
T
R
1
R
1
/R
2
Conditions
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
V
EB
= –6V, I
C
= 0
V
CE
= –10V, I
C
= –5mA
V
CE
= –10V, I
C
= –5mA
I
C
= –10mA, I
B
= – 0.3mA
V
CC
= –5V, V
B
= – 0.5V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –2.5V, R
L
= 1kΩ
V
CB
= –10V, I
E
= 1mA, f = 200MHz
–30%
0.8
80
10
1.0
+30%
1.2
–4.9
– 0.2
35
0.5
0.99
– 0.25
V
V
V
MHz
kΩ
min
–50
–50
– 0.1
– 0.5
– 0.5
typ
max
Unit
V
V
µA
µA
mA
Ratio between 2 elements
+0.1
1.45±0.1
s
Features
1
Composite Transistors
P
T
— Ta
500
XN1111
Total power dissipation P
T
(mW)
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (˚C)
I
C
— V
CE
–160
–140
I
B
=–1.0mA
Ta=25˚C
–100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
h
FE
— I
C
160
V
CE
= –10V
Ta=75˚C
–30
–10
–3
–1
–0.3
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
Ta=75˚C
Collector current I
C
(mA)
–0.9mA
–120
–100
–80
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
Forward current transfer ratio h
FE
25˚C
120
–25˚C
80
25˚C
40
–1
–3
–10
–30
–100
0
–1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
–10000
–3000
V
O
=–5V
Ta=25˚C
–100
–30
V
IN
— I
O
V
O
=–0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
–1000
–300
–100
–30
–10
–3
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
3
2
1
0
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
–10
–30
–100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
2
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