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FDP085N10A — N-Channel PowerTrench® MOSFET
November 2013
FDP085N10A
Features
N-Channel PowerTrench
®
MOSFET
100 V, 96 A, 8.5 mΩ
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s PowerTrench
®
process that has been tailored to mini-
mize the on-state resistance while maintaining superior
switching performance.
• R
DS(on)
= 7.35 mΩ (Typ.) @ V
GS
= 10 V, I
D
= 96 A
• Fast Switching Speed
• Low Gate Charge, Q
G
= 31 nC (Typ.)
• High Performance Trench Technology for Extremely Low
R
DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
D
GD
S
G
TO-220
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25 C)
o
Parameter
FDP085N10A_F102
100
±20
25
o
C)
(Note 1)
(Note 2)
(Note 3)
96
68
384
269
6.0
188
o
Unit
V
V
A
A
mJ
V/ns
W
W/
o
C
o
o
- Continuous (T
C
= 100
o
C)
- Pulsed
- Continuous (T
C
=
- Derate Above 25 C
1.25
-55 to +175
300
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
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