TIP42
TIP42A
TIP42B
TIP42C
PNP SILICON
POWER TRANSISTOR
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR TIP42 SERIES
types are PNP Epitaxial-Base Silicon Power
Transistors designed for power amplifier and high
speed switching applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS:
(TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
SYMBOL TIP42
VCBO
40
VCEO
40
VEBO
IC
ICM
IB
PD
PD
TJ, Tstg
TIP42A TIP42B TIP42C
60
80
100
60
5.0
6.0
10
2.0
65
2.0
-65 to +150
80
100
UNITS
V
V
V
A
A
A
W
W
°C
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICEO
VCE=30V (TIP42, TIP42A)
ICEO
VCE=60V (TIP42B, TIP42C)
ICES
IEBO
BVCEO
BVCEO
BVCEO
BVCEO
VCE(SAT)
VBE(ON)
hFE
hFE
hfe
fT
ton
toff
VCE=Rated VCEO
VEB=5.0V
IC=30mA (TIP42)
IC=30mA (TIP42A)
IC=30mA (TIP42B)
IC=30mA (TIP42C)
IC=6.0A, IB=0.6A
VCE=4.0V, IC=6.0A
VCE=4.0V, IC=0.3A
VCE=4.0V, IC=3.0A
VCE=10V, IC=0.5A, f=1.0kHz
VCE=10V, IC=0.5A, f=1.0MHz
IC=6.0A, IB1= IB2=0.6A, RL=5.0Ω
IC=6.0A, IB1= IB2=0.6A, RL=5.0Ω
30
15
20
3.0
0.4
0.7
40
60
80
100
MAX
0.7
0.7
0.4
1.0
UNITS
mA
mA
mA
mA
V
V
V
V
1.5
2.0
75
V
V
MHz
μs
μs
R2 (22-July 2014)
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nd
day air)
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REQUESTING PRODUCT PLATING
1.
2.
If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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