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HER1606PT C0G

Description
DIODE ARRAY GP 600V 16A TO247AD
Categorysemiconductor    Discrete semiconductor   
File Size395KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

HER1606PT C0G Overview

DIODE ARRAY GP 600V 16A TO247AD

HER1606PT C0G Parametric

Parameter NameAttribute value
Diode configuration1 pair of common cathodes
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)600V
Current - average rectification (Io) (per diode)16A
Voltage at different If - Forward (Vf1.7V @ 8A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)80ns
Current at different Vr - Reverse leakage current10µA @ 600V
Operating Temperature - Junction-55°C ~ 150°C
Installation typeThrough hole
Package/casingTO-247-3
Supplier device packagingTO-247AD(TO-3P)
HER1601PT - HER1608PT
Taiwan Semiconductor
CREAT BY ART
16A, 50V - 1000V Glass Passivated High Efficient Rectifiers
FEATURES
- Superfast recovery time, high voltage
- Low forward voltage, high current capability
- Low thermal resistance
- Low power loss, high efficiency
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
1
2
3
MECHANICAL DATA
Case:
TO-247AD (TO-3P)
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
1.13 Nm max.
Weight:
5.6 g (approximately)
TO-247AD (TO-3P)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
HER
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 8 A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0V DC.
T
J
=25°C
T
J
=125°C
PT
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
T
J
T
STG
50
85
- 55 to +150
- 55 to +150
1.0
10
500
80
60
50
35
50
HER
PT
100
70
100
HER
PT
200
140
200
HER
PT
300
210
300
16
200
1.3
1.7
HER
PT
400
280
400
HER
PT
600
420
600
HER
PT
800
560
800
HER
UNIT
V
V
V
A
A
V
μA
ns
pF
°C
°C
PT
1000
700
1000
SYMBOL 1601 1602 1603 1604 1605 1606 1607 1608
Version: G1601
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