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HMC591LP5E

Description
IC PWR AMP MMIC PHEMT 2W 32QFN
CategoryTopical application    Wireless rf/communication   
File Size401KB,8 Pages
ManufacturerADI
Websitehttps://www.analog.com
Environmental Compliance
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HMC591LP5E Overview

IC PWR AMP MMIC PHEMT 2W 32QFN

HMC591LP5E Parametric

Parameter NameAttribute value
frequency6GHz ~ 9.5GHz
P1dB33dBm
Gain19dB
Noise Figure-
RF typeUniversal
Voltage - Power6.5 V ~ 7.5 V
Current - Power1.34A
Test frequency-
Package/casing32-VFQFN Exposed Pad
Supplier device packaging32-QFN(5x5)
HMC591LP5 / 591LP5E
v02.0107
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Typical Applications
The HMC591LP5 / HMC591LP5E is ideal for use as a
power amplifier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
Features
Saturated Output Power: +33 dBm @ 20% PAE
Output IP3: +41 dBm
Gain: 18 dB
DC Supply: +7.V @ 1340 mA
50 Ohm Matched Input/Output
QFN Leadless SMT Packages, 25 mm
2
11
LINEAR & POWER AMPLIFIERS - SMT
• Test Equipment & Sensors
• Military End-Use
• Space
Functional Diagram
General Description
The HMC591LP5 & HMC591LP5E are high dynamic
range GaAs PHEMT MMIC 2 Watt Power Amplifiers
which operate from 6 to 9.5 GHz. The amplifier
provides 18 dB of gain, +33 dBm of saturated power,
and 19% PAE from a +7V supply. This 50 Ohm mat-
ched amplifier does not require any external
components and the RF I/Os are DC blocked for
robust operation. For applications which require
optimum OIP3, Idd should be set for 940 mA, to
yield +41 dBm OIP3. For applications which require
optimum output P1dB, Idd should be set for 1340 mA,
to yield +33 dBm Output P1dB.
Electrical Specifi cations,
T
A
= +25° C, Vdd = +7V, Idd = 1340 mA
[1]
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical.
[2] Measurement taken at 7V @ 940mA, Pin/Tone = -15 dBm
[2]
Min.
Typ.
6-8
Max.
Min.
Typ.
6 - 9.5
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
16
19
0.05
14
12
15
18
0.05
12
10
30
32
32.5
41
1340
30
33
33
41
1340
11 - 302
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact Hittite
Way, P.O. Box 9106, Norwood, MA 02062-9106
Microwave Corporation:
One Technology
20 Alpha Road, Chelmsford, MA 01824 Phone:
Phone: 781-329-4700 • Order online at www.analog.com
978-250-3343 Fax: 978-250-3373
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com

HMC591LP5E Related Products

HMC591LP5E HMC591 HMC590LP5ETR 108190-HMC591LP5 HMC591LP5TR HMC591-SX
Description IC PWR AMP MMIC PHEMT 2W 32QFN RF Amplifier 2 Watt pow amp Chip, 6 - 10 GHz IC PWR AMP MMIC PHEMT 1W 32QFN EVAL BOARD FOR HMC591LP5E IC MMIC PWR AMP PHEMT 2W 32QFN IC PWR AMP MMIC PHEMT DIE
frequency 6GHz ~ 9.5GHz - 6GHz ~ 9.5GHz 6GHz ~ 9.5GHz 6GHz ~ 9.5GHz 6GHz ~ 10GHz
P1dB 33dBm - 33dBm - 33dBm 33dBm
Gain 19dB 23 dB 19dB - 19dB 23dB
Voltage - Power 6.5 V ~ 7.5 V - 7V - 7V 7V
Current - Power 1.34A - 1.34A - 1.34A 1.34A
Package/casing 32-VFQFN Exposed Pad - 32-VFQFN Exposed Pad - 32-VFQFN Exposed Pad Mold
Supplier device packaging 32-QFN(5x5) - 32-QFN(5x5) - 32-QFN(5x5) Mold

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