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BLF182XRU

Description
RF FET LDMOS 135V 28DB SOT1121B
Categorysemiconductor    Discrete semiconductor   
File Size1MB,15 Pages
ManufacturerAmphenol
Websitehttp://www.amphenol.com/
Environmental Compliance
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BLF182XRU Overview

RF FET LDMOS 135V 28DB SOT1121B

BLF182XRU Parametric

Parameter NameAttribute value
Transistor typeLDMOS (dual), common source
frequency108MHz
Gain28dB
Voltage - Test50V
Rated current-
Noise Figure-
Current - Test100mA
Power - output250W
Voltage - Rated135V
Package/casingSOT-1121B
BLF182XR; BLF182XRS
Power LDMOS transistor
Rev. 3 — 3 February 2016
Product data sheet
1. Product profile
1.1 General description
A 250 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1.
Application information
f
(MHz)
pulsed RF
CW
108
81.36
V
DS
(V)
50
50
P
L
(W)
250
235
G
p
(dB)
28
28
D
(%)
75
82
Test signal
1.2 Features and benefits
Easy power control
Integrated double sided ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications

BLF182XRU Related Products

BLF182XRU BLF182XRSU
Description RF FET LDMOS 135V 28DB SOT1121B RF FET LDMOS 135V 28DB SOT1121B
Transistor type LDMOS (dual), common source LDMOS (dual), common source
frequency 108MHz 108MHz
Gain 28dB 28dB
Voltage - Test 50V 50V
Current - Test 100mA 100mA
Power - output 250W 250W
Voltage - Rated 135V 135V
Package/casing SOT-1121B SOT-1121B
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