Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GP120
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
Durchlaßstrom Grenzeffektivwert
RMS forward current per chip
Dauergleichstrom
DC forward current
Stoßstrom Grenzwert
surge forward current
Grenzlastintegral
I t - value
2
V
RRM
I
FRMSM
T
C
= 80°C
t
P
= 10 ms, T
vj
=
t
P
= 10 ms, T
vj
=
25°C
25°C
I
d
I
FSM
It
2
1600
40
50
500
400
1250
800
V
A
A
A
A
A
2
s
A
2
s
t
P
= 10 ms, T
vj
= 150°C
t
P
= 10 ms, T
vj
= 150°C
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral
I
2
t - value
Tc = 80 °C
t
P
= 1 ms
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
I
F
I
FRM
2
It
V
CES
Tc = 80 °C
T
C
= 25 °C
t
P
= 1 ms,
T
C
= 25°C
T
C
= 80 °C
I
C,nom.
I
C
I
CRM
P
tot
V
GES
1200
50
80
100
360
+/- 20V
V
A
A
A
W
V
50
100
1.200
A
A
A
2
s
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
prepared by: Andreas Schulz
approved by: Robert Severin
Tc = 80 °C
t
P
= 1 ms
I
F
I
FRM
15
30
A
A
T
C
= 80 °C
T
C
= 25 °C
t
P
= 1 ms, T
C
= 80°C
T
C
= 25°C
V
CES
I
C,nom.
I
C
I
CRM
P
tot
V
GES
1200
25
45
50
230
+/- 20V
V
A
A
A
W
V
date of publication:12.06.2003
revision: 6
1(11)
DB-PIM-10.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GP120
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
V
ISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
T
vj
= 150°C,
T
vj
= 150°C
T
vj
= 150°C
T
vj
= 150°C,
V
R
= 1600 V
I
F
= 50 A
V
F
V
(TO)
r
T
I
R
R
AA'+CC'
min.
-
-
-
-
-
typ.
1,05
-
-
3
4
max.
-
0,8
6,5
-
-
V
V
mW
mA
mW
Modul Leitungswiderstand, Anschlüsse-Chip
T
C
= 25°C
lead resistance, terminals-chip
Transistor Wechselrichter/ Transistor Inverter
V
GE
= 15V, T
vj
= 25°C,
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
V
GE
= 15V, T
vj
= 125°C,
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
V
CE
= V
GE
,
T
vj
= 25°C,
min.
I
C
=
I
C
=
I
C
=
50 A
50 A
2 mA
V
GE(TO)
C
ies
1200 V
1200 V
I
GES
600 V
15 Ohm
15 Ohm
600 V
15 Ohm
15 Ohm
600 V
15 Ohm
15 Ohm
600 V
15 Ohm
15 Ohm
600 V
15 Ohm
50 nH
600 V
15 Ohm
50 nH
15 Ohm
720 V
4000 A/µs
I
SC
-
E
off
-
E
on
-
t
f
-
-
t
d,off
-
-
t
r
-
-
t
d,on
-
-
I
CES
V
CE sat
-
-
4,5
-
-
-
-
typ.
2,2
2,5
5,5
3,3
3,0
4,0
-
max.
2,55
-
6,5
-
500
-
300
V
V
V
nF
µA
mA
nA
f = 1MHz, T
vj
= 25°C
V
CE
= 25 V, V
GE
= 0 V
V
GE
= 0V,
V
GE
= 0V,
T
vj
= 25°C, V
CE
=
T
vj
=125°C, V
CE
=
V
CE
= 0V, V
GE
=20V, T
vj
=25°C
I
C
= I
Nenn
,
V
CC
=
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
,
V
CC
=
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
,
V
CC
=
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
,
V
CC
=
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
,
V
CC
=
L
S
=
I
C
= I
Nenn
,
V
CC
=
L
S
=
t
P
£
10µs, V
GE
£
15V,
T
vj
£125°C,
R
G
=
V
CC
=
dI/dt =
V
GE
= ±15V, T
vj
= 125°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
65
60
45
45
380
400
10
30
6,5
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
mWs
6
-
mWs
300
-
A
2(11)
DB-PIM-10.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GP120
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min.
Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip
T
C
= 25°C
lead resistance, terminals-chip
Diode Wechselrichter/ Diode Inverter
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
L
sCE
R
CC'+EE'
-
-
typ.
-
7
max.
100
-
nH
mW
min.
V
GE
= 0V, T
vj
= 25°C,
V
GE
= 0V, T
vj
= 125°C,
I
F
=I
Nenn
,
I
F
=
I
F
=
50 A
50 A
1600A/µs
600 V
600 V
1600A/µs
600 V
600 V
1600A/µs
600 V
600 V
E
RQ
-
-
Q
r
-
-
I
RM
-
-
V
F
-
-
typ.
1,75
1,7
75
85
5,5
12
1,6
4
max.
2,2
-
-
-
-
-
-
-
V
V
A
A
µAs
µAs
mWs
mWs
- di
F
/dt =
V
GE
= -10V, T
vj
= 25°C, V
R
=
V
GE
= -10V, T
vj
= 125°C, V
R
=
I
F
=I
Nenn
,
- di
F
/dt =
V
GE
= -10V, T
vj
= 25°C, V
R
=
V
GE
= -10V, T
vj
= 125°C, V
R
=
I
F
=I
Nenn
,
- di
F
/dt =
V
GE
= -10V, T
vj
= 25°C, V
R
=
V
GE
= -10V, T
vj
= 125°C, V
R
=
Transistor Brems-Chopper/ Transistor Brake-Chopper
V
GE
= 15V, T
vj
= 25°C,
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
V
GE
= 15V, T
vj
= 125°C,
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= V
GE
,
T
vj
= 25°C,
min.
I
C
=
I
C
=
I
C
=
25,0 A
25,0 A
1mA
V
GE(TO)
C
ies
1200 V
1200 V
I
GES
I
CES
V
CE sat
-
-
4,5
-
-
-
-
typ.
2,2
2,5
5,5
1,5
1,5
2,0
-
max.
2,55
-
6,5
-
500
-
300
V
V
V
nF
µA
mA
nA
f = 1MHz, T
vj
= 25°C
V
CE
= 25 V, V
GE
= 0 V
V
GE
= 0V, T
vj
= 25°C, V
CE
=
V
GE
= 0V, T
vj
= 125°C, V
CE
=
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
Diode Brems-Chopper/ Diode Brake-Chopper
T
vj
= 25°C,
Durchlaßspannung
forward voltage
T
vj
= 125°C,
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
rated resistance
Abweichung von R
100
deviation of R
100
Verlustleistung
power dissipation
B-Wert
B-value
min.
I
F
=
I
F
=
25,0 A
25,0 A
V
F
-
-
typ.
2,1
2
max.
2,4
-
V
V
min.
T
C
= 25°C
T
C
= 100°C, R
100
= 493
W
T
C
= 25°C
R
2
= R
1
exp [B(1/T
2
- 1/T
1
)]
R
25
DR/R
P
25
B
25/50
-
-5
typ.
5
max.
-
5
20
kW
%
mW
K
3375
3(11)
DB-PIM-10.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GP120
Thermische Eigenschaften / Thermal properties
min.
Innerer Wärmewiderstand
thermal resistance, junction to case
Gleichr. Diode/ Rectif. Diode
Trans. Wechsr./ Trans. Inverter
Diode Wechsr./ Diode Inverter
Trans. Bremse/ Trans. Brake
Diode Bremse/ Diode Brake
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Gleichr. Diode/ Rectif. Diode
Trans. Wechsr./ Trans. Inverter
Diode Wechsr./ Diode Inverter
T
vj
T
op
T
stg
l
Paste
=1W/m*K
l
grease
=1W/m*K
typ.
-
-
-
-
-
0,04
0,02
0,04
-
-
-
max.
0,65
0,35
0,55
0,55
1,2
-
-
-
150
125
125
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
°C
°C
°C
R
thJC
-
-
-
-
-
R
thCK
-
-
-
-
-40
-40
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
internal insulation
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Gewicht
weight
M
Al
2
O
3
225
3
±10%
G
300
g
Nm
4(11)
DB-PIM-10.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GP120
I
C
= f (V
CE
)
Ausgangskennlinienfeld Wechselr. (typisch)
Output characteristic Inverter (typical)
100
90
80
Tj = 25°C
70
60
Tj = 125°C
V
GE
= 15 V
I
C
[A]
50
40
30
20
10
0
0
0,5
1
1,5
2
2,5
3
3,5
4
4,5
5
V
CE
[V]
Ausgangskennlinienfeld Wechselr. (typisch)
Output characteristic Inverter (typical)
100
90
80
70
60
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
I
C
= f (V
CE
)
T
vj
= 125°C
I
C
[A]
50
40
30
20
10
0
0
0,5
1
1,5
2
2,5
3
3,5
4
4,5
5
V
CE
[V]
5(11)
DB-PIM-10.xls
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