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DB4J310K0R

Description
DIODE ARRAY SCHOTTKY 30V SMINI4
CategoryDiscrete semiconductor    diode   
File Size479KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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DB4J310K0R Overview

DIODE ARRAY SCHOTTKY 30V SMINI4

DB4J310K0R Parametric

Parameter NameAttribute value
package instructionR-PDSO-F4
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.27 V
frequency bandVERY HIGH FREQUENCY
JESD-30 codeR-PDSO-F4
Humidity sensitivity level1
Number of components2
Number of terminals4
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage30 V
Maximum reverse current200 µA
Reverse test voltage30 V
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
DB4J310K
Features
Silicon epitaxial planar type
For high speed switching circuits
Short reverse recovery time t
rr
Low forward voltage V
F
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: 4A
Basic Part Number
Dual DB2J310 (Parallel)
Packaging
DB4J310K0R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Peak forward current
Single
Double
*1
Single
Double
*1
Symbol
V
R
V
RRM
I
F(AV)
I
FM
I
FSM
T
j
T
opr
T
stg
Rating
30
30
200
150
300
225
1
125
–40 to +85
–55 to +125
Unit
V
V
mA
mA
mA
mA
A
°C
°C
°C
1
2
4
3
1: Anode-1
2: Anode-2
Panasonic
JEITA
Code
3: Cathode-2
4: Cathode-1
SMini4-F3-B
SC-113BB
Non-repetitive peak forward surge current
*2
Junction temperature
Operating ambient temperature
Storage temperature
Note) *1: Value of each diode in double diodes used.
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Symbol
V
F1
V
F2
V
F3
Reverse current
Terminal capacitance
Reverse recovery time
*1
I
R1
I
R2
C
t
t
rr
I
F
= 5 mA
I
F
= 100 mA
I
F
= 200 mA
V
R
= 10 V
V
R
= 30 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
= 100 mA, I
rr
= 10 mA, R
L
= 100
4.5
1.6
Conditions
Min
Typ
Max
0.27
0.40
0.47
20
200
µA
pF
ns
V
Unit
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
*1: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
= 10 mA
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
Pulse Generator
(PG-10N)
R
s
= 50
Publication date: May 2013
Ver. EED
1

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