M2S025-VF256I datasheet, PDF - EEWORLD Datasheet

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M2S025-VF256I: DescriptionField Programmable Gate Array, 27696-Cell, CMOS, PBGA256, VFBGA-256; CategoryProgrammable logic devices Programmable logic; File Size1MB，141 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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M2S025-VF256I Overview

Field Programmable Gate Array, 27696-Cell, CMOS, PBGA256, VFBGA-256

M2S025-VF256I Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	1957705295
package instruction	LFBGA, BGA256,16X16,32
Reach Compliance Code	not_compliant
Samacsys Manufacturer	Microsemi Corporation
Samacsys Modified On	2020-08-21 06:03:03
Other features	LG-MIN, WD-MIN
JESD-30 code	S-PBGA-B256
JESD-609 code	e0
length	14 mm
Number of entries	138
Number of logical units	27696
Output times	138
Number of terminals	256
Maximum operating temperature	100 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Encapsulate equivalent code	BGA256,16X16,32
Package shape	SQUARE
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	240
power supply	1.2 V
Programmable logic type	FIELD PROGRAMMABLE GATE ARRAY
Certification status	Not Qualified
Maximum seat height	1.56 mm
Maximum supply voltage	1.26 V
Minimum supply voltage	1.14 V
Nominal supply voltage	1.2 V
surface mount	YES
technology	CMOS
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
width	14 mm

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DS0128

Datasheet

IGLOO2 FPGA and SmartFusion2 SoC FPGA

Microsemi Corporate Headquarters

One Enterprise, Aliso Viejo,

CA 92656 USA

Within the USA: +1 (800) 713-4113

Outside the USA: +1 (949) 380-6100

Fax: +1 (949) 215-4996

Email:

sales.support@microsemi.com

www.microsemi.com

rights reserved. Microsemi and the

Microsemi logo are trademarks of

Microsemi Corporation. All other

trademarks and service marks are the

property of their respective owners.

Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of

its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the

application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have

been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any

performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all

performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not

rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer's responsibility to

independently determine suitability of any products and to test and verify the same. The information provided by Microsemi

hereunder is provided “as is, where is” and with all faults, and the entire risk associated with such information is entirely

with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP

rights, whether with regard to such information itself or anything described by such information. Information provided in this

document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this

document or to any products and services at any time without notice.

About Microsemi

Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for

aerospace & defense, communications, data center and industrial markets. Products include high-performance and

radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products;

timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing

devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and

scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design

capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees

globally. Learn more at

www.microsemi.com.

51700128. 11.0 10/16

Contents

1 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

1.10

1.11

Revision 11.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Revision 10.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Revision 9.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Revision 8.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Revision 7.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Revision 6.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Revision 5.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Revision 4.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Revision 3.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Revision 2.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Revision 1.0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2 IGLOO2 FPGA and SmartFusion2 SoC FPGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1

2.2

2.3

Device Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.3.1

Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.3.2

Power Consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2.3.3

Average Fabric Temperature and Voltage Derating Factors . . . . . . . . . . . . . . . . . . . . . . . . . . 14

2.3.4

Timing Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

2.3.5

User I/O Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

2.3.6

Logic Element Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75

2.3.7

Global Resource Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78

2.3.8

FPGA Fabric SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79

2.3.9

Programming Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94

2.3.10 Math Block Timing Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103

2.3.11 Embedded NVM (eNVM) Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104

2.3.12 SRAM PUF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105

2.3.13 Non-Deterministic Random Bit Generator (NRBG) Characteristics . . . . . . . . . . . . . . . . . . . . 106

2.3.14 Cryptographic Block Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106

2.3.15 Crystal Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107

2.3.16 On-Chip Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109

2.3.17 Clock Conditioning Circuits (CCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110

2.3.18 JTAG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112

2.3.19 System Controller SPI Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113

2.3.20 Power-up to Functional Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114

2.3.21 DEVRST_N Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116

2.3.22 DEVRST_N to Functional Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116

2.3.23 Flash*Freeze Timing Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119

2.3.24 DDR Memory Interface Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120

2.3.25 SFP Transceiver Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120

2.3.26 SerDes Electrical and Timing AC and DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 121

2.3.27 SmartFusion2 Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123

2.3.28 CAN Controller Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128

2.3.29 USB Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128

2.3.30 MMUART Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129

2.3.31 IGLOO2 Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129

DS0128 Datasheet Revision 11.0

iii

Figures

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Figure 15

Figure 16

Figure 17

Figure 18

Figure 19

Figure 20

Figure 21

Figure 22

Figure 23

High Temperature Data Retention (HTR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Timing Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Input Buffer AC Loading . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Output Buffer AC Loading . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Tristate Buffer for Enable Path Test Point . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Timing Model for Input Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65

I/O Register Input Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66

Timing Model for Output/Enable Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68

I/O Register Output Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69

Input DDR Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70

Input DDR Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71

Output DDR Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73

Output DDR Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74

LUT-4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75

Sequential Module . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76

Sequential Module Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77

Power-up to Functional Timing Diagram for SmartFusion2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115

Power-up to Functional Timing Diagram for IGLOO2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116

DEVRST_N to Functional Timing Diagram for SmartFusion2 . . . . . . . . . . . . . . . . . . . . . . . . . . . 117

DEVRST_N to Functional Timing Diagram for IGLOO2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119

I2C Timing Parameter Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125

SPI Timing for a Single Frame Transfer in Motorola Mode (SPH = 1) . . . . . . . . . . . . . . . . . . . . . 128

SPI Timing for a Single Frame Transfer in Motorola Mode (SPH = 1) . . . . . . . . . . . . . . . . . . . . . 131

DS0128 Datasheet Revision 11.0

Tables

Table 1

Table 2

Table 3

Table 4

Table 5

Table 6

Table 7

Table 8

Table 9

Table 10

Table 11

Table 12

Table 13

Table 14

Table 15

Table 16

Table 17

Table 18

Table 19

Table 20

Table 21

Table 22

Table 23

Table 24

Table 25

Table 26

Table 27

Table 28

Table 29

Table 30

Table 31

Table 32

Table 33

Table 34

Table 35

Table 36

Table 37

Table 38

Table 39

Table 40

Table 41

Table 42

Table 43

Table 44

Table 45

Table 46

Table 47

Table 48

Table 49

Table 50

IGLOO2 and SmartFusion2 Design Security Densities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

IGLOO2 and SmartFusion2 Data Security Densities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

FPGA Operating Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Embedded Operating Flash Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Device Storage Temperature and Retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

High Temperature Data Retention (HTR) Lifetime . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Package Thermal Resistance of SmartFusion2 and IGLOO2 Devices . . . . . . . . . . . . . . . . . . . . . 10

Quiescent Supply Current Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

SmartFusion2 and IGLOO2 Quiescent Supply Current (V

= 1.2 V) – Typical Process . . . . . . . 12

Currents During Program Cycle, 0 °C < = T

<= 85 °C – Typical Process . . . . . . . . . . . . . . . . . . . 13

Currents During Verify Cycle, 0 °C <= T

<= 85 °C – Typical Process . . . . . . . . . . . . . . . . . . . . . . 13

SmartFusion2 and IGLOO2 Quiescent Supply Current (V

= 1.26 V) – Worst-Case Process . . 13

Average Junction Temperature and Voltage Derating Factors for Fabric Timing Delays . . . . . . . . 14

Inrush Currents at Power up, –40 °C <= T

<= 100 °C – Typical Process . . . . . . . . . . . . . . . . . . . 14

Timing Model Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Maximum Data Rate Summary Table for Single-Ended I/O in Worst-Case Industrial Conditions . 19

Maximum Data Rate Summary Table for Voltage-Referenced I/O in Worst-Case

Industrial Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Maximum Data Rate Summary Table for Differential I/O in Worst-Case Industrial Conditions . . . 20

Maximum Frequency Summary Table for Single-Ended I/O in Worst-Case Industrial Conditions . 20

Maximum Frequency Summary Table for Voltage-Referenced I/O in Worst-Case Industrial

Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Maximum Frequency Summary Table for Differential I/O in Worst-Case Industrial Conditions . . . 21

Input Capacitance, Leakage Current, and Ramp Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

I/O Weak Pull-up/Pull-down Resistances for DDRIO I/O Bank . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

I/O Weak Pull-Up/Pull-Down Resistances for MSIO I/O Bank . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

I/O Weak Pull-up/Pull-down Resistances for MSIOD I/O Bank . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Schmitt Trigger Input Hysteresis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

LVTTL/LVCMOS 3.3 V DC Recommended DC Operating Conditions (Applicable to MSIO I/O

Bank Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

LVTTL/LVCMOS 3.3 V Input Voltage Specification (Applicable to MSIO I/O Bank Only) . . . . . . . 24

LVCMOS 3.3 V DC Output Voltage Specification (Applicable to MSIO I/O Bank Only) . . . . . . . . . 24

LVTTL 3.3 V DC Output Voltage Specification (Applicable to MSIO I/O Bank Only) . . . . . . . . . . . 24

LVTTL/LVCMOS 3.3 V AC Maximum Switching Speed (Applicable to MSIO I/O Bank Only) . . . . 24

LVTTL/LVCMOS 3.3 V Receiver Characteristics for MSIO I/O Bank (Input Buffers) . . . . . . . . . . . 25

LVTTL/LVCMOS 3.3 V Transmitter Characteristics for MSIO I/O Bank (Output and

Tristate Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

LVTTL/LVCMOS 3.3 V AC Test Parameter Specifications (Applicable to MSIO I/O Bank Only) . . 25

LVTTL/LVCMOS 3.3 V Transmitter Drive Strength Specifications for MSIO I/O Bank . . . . . . . . . . 25

LVCMOS 2.5 V DC Recommended DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

LVCMOS 2.5 V DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

LVCMOS 2.5 V DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

LVCMOS 2.5 V AC Minimum and Maximum Switching Speed . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

LVCMOS 2.5 V AC Calibrated Impedance Option . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

LVCMOS 2.5 V Receiver Characteristics (Input Buffers) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

LVCMOS 2.5 V Transmitter Characteristics for DDRIO Bank (Output and Tristate Buffers) . . . . . 27

LVCMOS 2.5 V AC Test Parameter Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

LVCMOS 2.5 V Transmitter Drive Strength Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

LVCMOS 2.5 V Transmitter Characteristics for MSIO Bank (Output and Tristate Buffers) . . . . . . 28

LVCMOS 1.8 V DC Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

LVCMOS 1.8 V DC Input Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

LVCMOS 1.8 V DC Output Voltage Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

DS0128 Datasheet Revision 11.0

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