SIDC30D120H8
Fast switching diode chip in Emitter Controlled Technology
Features:
1200V Emitter Controlled technology
120 µm chip
Soft, fast switching
Low reverse recovery charge
Small temperature coefficient
Qualified according to JEDEC for target
applications
Recommended for:
Power modules and discrete
devices
Applications:
SMPS, resonant applications,
drives
Chip Type
SIDC30D120H8
V
R
1200V
I
Fn
50A
Die Size
5.5 x 5.5 mm
2
Package
sawn on foil
Mechanical Parameters
Die size
Area total
Anode pad size
Thickness
Wafer size
Max. possible chips per wafer
Passivation frontside
Pad metal
5.5 x 5.5
30.25
4.78 x 4.78
120
200
891
Photoimide
3200 nm AlSiCu
Ni Ag – system
To achieve a reliable solder connection it is strongly
recommended not to consume the Ni layer completely during
production process
Electrically conductive epoxy glue and soft solder
Al,
500 µm
0.65 mm; max 1.2 mm
for original and
sealed MBB bags
Storage environment
for open MBB bags
Acc. to IEC62258-3: Atmosphere > 99% Nitrogen or inert gas,
Humidity < 25% RH, Temperature 17 °C – 25 °C, < 6 months
Ambient atmosphere air, Temperature 17 °C – 25 °C,
< 6 months
µm
mm
mm
2
Backside metal
Die bond
Wire bond
Reject ink dot size
Edited by INFINEON Technologies, L4057C, Rev 2.1, 14.10.2015
SIDC30D120H8
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Continuous forward current
Maximum repetitive forward current
²
)
Junction temperature range
Operating junction temperature
1)
2)
Symbol
V
RRM
I
F
I
FRM
T
vj
T
vj
Condition
T
vj
= 25 °C
T
vj
< 150 °C
T
vj
< 150 °C
Value
1200
1)
Unit
V
A
C
C
100
-40...+175
-40...+150
depending on thermal properties of assembly
not subject to production test - verified by design/characterisation
Static Characteristics
(tested on wafer),
T
vj
= 25 °C
Parameter
Reverse leakage current
Cathode-Anode breakdown
voltage
Forward voltage drop
Symbol
I
R
V
BR
V
F
Condition
V
R
= 1 20 0 V
I
R
= 0. 25 m A
I
F
= 50A
1200
1.23
1.6
1.97
Value
min.
typ.
max.
27
Unit
µA
V
Further Electrical Characteristics
Switching characteristics and thermal properties are depending strongly on module design and mounting
technology and can therefore not be specified for a bare die.
This chip data sheet refers to the device data sheet
FS50R12KE3
Rev. 3.0, 03.09.2002
Edited by INFINEON Technologies, L4057C, Rev 2.1, 14.10.2015
SIDC30D120H8
Chip Drawing
A
A: Anode pad
Edited by INFINEON Technologies, L4057C, Rev 2.1, 14.10.2015
SIDC30D120H8
Bare Die Product Specifics
Test coverage at wafer level cannot cover all application conditions. Therefore it is recommended to test all
characteristics which are relevant for the application at package level, including RBSOA and SCSOA.
Description
AQL 0.65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History
Version
2.0
2.1
Final data sheet
Editorial changes
Subject (major changes since last revision)
Date
30.12.2014
14.10.2015
Edited by INFINEON Technologies, L4057C, Rev 2.1, 14.10.2015
SIDC30D120H8
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2015.
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated
herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims
any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of
intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations
stated in this document and any applicable legal requirements, norms and standards concerning customer’s
products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility
of customer’s technical departments to evaluate the suitability of the product for the intended application and
the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact
your nearest Infineon Technologies office (www.infineon.com).
Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the
Automotive Electronics Council.
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any
applications where a failure of the product or any consequences of the use thereof can reasonably be
expected to result in personal injury.
Edited by INFINEON Technologies, L4057C, Rev 2.1, 14.10.2015
Power technology
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