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RJU6053TDPP-EJ#T2

Description
DIODE GEN PURP 600V 20A TO220FP
Categorysemiconductor    Discrete semiconductor   
File Size80KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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RJU6053TDPP-EJ#T2 Overview

DIODE GEN PURP 600V 20A TO220FP

RJU6053TDPP-EJ#T2 Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)600V
Current - average rectification (Io)20A(DC)
Voltage at different If - Forward (Vf3V @ 20A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)25ns
Current at different Vr - Reverse leakage current1µA @ 600V
Capacitance at different Vr, F-
Installation typeThrough hole
Package/casingTO-220-2 whole package
Supplier device packagingTO-220FP-2L
Operating Temperature - Junction150°C (maximum)
Preliminary
Datasheet
RJU6053TDPP-EJ
Single Diode
Ultra Fast Recovery Diode
Features
Ultra fast reverse recovery time: t
rr
= 25 ns typ. (at I
F
= 20 A, di/dt = 100 A/μs)
Low forward voltage: V
F
= 2.5 V typ. (at I
F
= 20 A)
Low reverse current: I
R
= 1
μA
max. (at V
R
= 600 V)
R07DS0383EJ0100
Rev.1.00
Apr 26, 2011
Outline
RENESAS Package code: PRSS0002ZA-A
(Package name: TO-220FP-2L)
1
1. Cathode
2. Anode
2
1
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Maximum reverse voltage
Continuous forward current
Symbol
V
RM
I
F
I
F
I
FSM
θj-cd
Tj
Tstg
Ratings
600
20
10
60
2.5
150
–55 to +150
Unit
V
A
A
A
°C/W
°C
°C
Tc = 25°C
Tc = 100°C
Peak surge forward current
Junction to case thermal resistance
Junction temperature
Storage temperature
Electrical Characteristics
(Ta = 25°C)
Item
Forward Voltage
Reverse current
Reverse Recovery Time
Symbol
V
F
I
R
t
rr
Min
Typ
2.5
25
Max
3.0
1
Unit
V
μA
ns
Test conditions
I
F
= 20 A
V
R
= 600 V
I
F
= 20 A, di/dt = 100 A/μs
R07DS0383EJ0100 Rev.1.00
Apr 26, 2011
Page 1 of 3

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