SPECIFICATIONS FOR J/SST308, J/SST309 AND J/SST310 (T
A
= 25_C UNLESS NOTED)
Limits
J/SST308
J/SST309
J/SST310
Parameter
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
b
Gate Reverse Current
Gate Operating Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Symbol
Test Conditions
Typ
a
Min Max Min
Max Min
Max Unit
V
(BR)GSS
V
GS(off)
I
DSS
I
GSS
I
G
r
DS(on)
V
GS(F)
I
G
=
−1
mA
, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 nA
V
DS
= 10 V, V
GS
= 0 V
V
GS
=
−15
V, V
DS
= 0 V
T
A
= 125_C
V
DG
= 9 V, I
D
= 10 mA
V
GS
= 0 V, I
D
= 1 mA
I
G
= 10 mA
V
DS
= 0 V
J
−35
−25
−1
12
−6.5
60
−1
−1
−25
−1
12
−4
30
−1
−1
−25
−2
24
−6.5
60
−1
−1
V
V
mA
nA
mA
pA
W
−0.002
−0.001
−15
35
0.7
1
1
1
V
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common Source
Common-Source
Reverse Transfer C
Capacitance
Equivalent Input
Noise Voltage
g
fs
g
os
C
iiss
C
rss
e
n
V
DS
= 10 V, I
D
= 10 mA
f = 1 kHz
J
V
DS
= 10 V
V
GS
=
−10
V
10
f = 1 MHz
V
DS
= 10 V, I
D
= 10 mA
f = 100 Hz
SST
J
SST
14
110
4
4
1.9
1.9
6
nV⁄
√Hz
2.5
2.5
2.5
8
250
5
10
250
5
8
250
5
mS
mS
pF
High Frequency
Common-Gate
Forward Transconductance
Common-Gate
Output Conductance
Common-Gate
Common Gate Power Gain
c
Noise Figure
g
f
fg
g
og
G
pg
NF
f = 105 MHz
f = 450 MHz
f = 105 MHz
V
DS
= 10 V
I
D
= 10 mA
f = 450 MHz
f = 105 MHz
f = 450 MHz
f = 105 MHz
f = 450 MHz
14
13
0.16
0.55
16
11.5
1.5
2.7
NZB
dB
mS
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle
v3%.
c. Gain (G
pg
) measured at optimum input noise match.
www.vishay.com
2
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
J/SST/U308 Series
Vishay Siliconix
SPECIFICATIONS FOR U309 AND U310 (T
A
= 25_C UNLESS NOTED)
Limits
U309
U310
Parameter
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
b
Gate Reverse Current
Gate Operating Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
V
(BR)GSS
V
GS(off)
I
DSS
I
GSS
I
G
r
DS(on)
V
GS(F)
I
G
=
−1
mA
, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 nA
V
DS
= 10 V, V
GS
= 0 V
V
GS
=
−15
V, V
DS
= 0 V
T
A
= 125_C
V
DG
= 9 V, I
D
= 10 mA
V
GS
= 0 V, I
D
= 1 mA
I
G
= 10 mA , V
DS
= 0 V
−35
−25
−1
12
−4
30
−25
−2.5
24
−6
60
V
V
mA
nA
mA
pA
W
−0.002
−0.001
−15
35
0.7
−
0.15
−
0.15
−
0.15
−
0.15
1
1
V
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
g
fs
g
os
C
iss
C
rss
e
n
V
DS
= 10 V, I
D
= 10 mA
f = 1 kHz
14
110
4
1.9
6
10
250
5
2.5
10
250
5
pF
2.5
nV⁄
√Hz
mS
mS
V
DS
= 10 V, V
GS
=
−10
V
f = 1 MHz
V
DS
= 10 V, I
D
= 10 mA
f = 100 Hz
High Frequency
Common-Gate
Forward Transconductance
Common-Gate
Output Conductance
Common-Gate
Common Gate Power Gain
c, d
g
f
fg
f = 105 MHz
f = 450 MHz
f = 105 MHz
V
DS
= 10 V
I
D
= 10 mA
G
pg
f = 450 MHz
f = 105 MHz
f = 450 MHz
f = 105 MHz
f = 450 MHz
14
13
0.16
0.55
16
11.5
1.5
2.7
14
10
2
3.5
14
10
2
3.5
NZB
dB
mS
g
og
Noise Figure
d
NF
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle
v3%.
c. Gain (G
pg
) measured at optimum input noise match.
d. Not a production test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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