BSR56; BSR57; BSR58
N-channel FETs
Rev. 3 — 25 June 2014
Product data sheet
1. Product profile
1.1 General description
Symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) in a
plastic microminiature envelope designed for application in thick and thin-film circuits. The
transistors are intended for low-power, chopper or switching applications in industrial
service.
1.2 Features and benefits
Interchangeable drain and source connections
Small package
1.3 Applications
Low-power, chopper or switching applications
Thick and thin-film circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
DSS
Quick reference data
Parameter
drain-source voltage
drain leakage current
V
DS
= 15 V; V
GS
= 0 V;
T
mb
= 40
C
V
DS
= 15 V;
I
D
= 0.5 nA
V
DS
= 0 V; V
GS
=
10
V;
f = 1 MHz
I
D
= 20 mA; V
GSM
=
10
V
I
D
= 10 mA; V
GSM
=
6
V
I
D
= 5 mA; V
GSM
=
4
V
P
tot
R
DSon
total power dissipation
drain-source on-state
resistance
T
mb
= 40 °C
V
GS
= 0 V; I
D
= 0 A; f = 1 kHz
Static characteristics
-
<25
-
<40
-
<60
Conditions
BSR56
Min
-
-
-
>4
<10
-
Max
40
>50
-
-
-
<5
BSR57
Min
-
-
-
>2
<6
-
Max
40
>20
<100
-
-
<5
BSR58
Min
-
-
-
>0.8
<4
-
Max
40
>8
<80
-
-
<5
V
mA
mA
V
V
pF
Unit
V
GSoff
C
rs
gate-source cut-off
voltage
feedback capacitance
Switching time (V
DD
= 10 V; V
GS
= 0 V)
t
off
turn-off time
-
-
-
-
<25
-
-
250
-
-
-
-
-
<50
-
250
-
-
-
-
-
-
250
ns
ns
mW
<100 ns
NXP Semiconductors
BSR56; BSR57; BSR58
N-channel FETs
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
source
gate
[1]
[1]
Simplified outline
3
Graphic symbol
d
s
sym054
g
1
2
[1]
Drain and source are interchangeable.
3. Ordering information
Table 3.
Ordering information
Package
Name
BSR56
BSR57
BSR58
Description
Version
SOT23
TO-236AB plastic surface-mounted package; 3 leads
Type number
4. Marking
Table 4.
BSR56
BSR57
BSR58
Marking codes
Marking code
M4P
M5P
M6P
Type number
BSR56_57_58
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 25 June 2014
2 of 10
NXP Semiconductors
BSR56; BSR57; BSR58
N-channel FETs
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
V
DG
I
G
P
tot
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
drain-gate voltage
gate current
total power dissipation
storage temperature
junction temperature
Conditions
Min
-
-
-
-
Max
40
40
40
50
250
+150
150
Unit
V
V
V
mA
mW
C
C
T
amb
= 40
C
[1]
-
65
-
Mounted on a ceramic substrate, 8 mm
10 mm
0.7 mm.
300
P
tot
(mW)
aaa-013766
200
100
0
0
40
80
120
160
200
T
amb
(°C)
Fig 1.
Power derating curve
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
ambient
Conditions
[1]
Typ
430
Unit
K/W
[1]
Mounted on a ceramic substrate, 8 mm
10 mm
0.7 mm.
BSR56_57_58
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 25 June 2014
3 of 10
NXP Semiconductors
BSR56; BSR57; BSR58
N-channel FETs
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
I
GSS
I
DSX
V
(BR)GSS
V
GSoff
I
D
C
rs
R
DSon
V
DSon
Parameter
gate-source cut-off
current
drain cut-off current
gate-source breakdown
voltage
gate-source cut-off
voltage
drain current
feedback capacitance
drain-source on-state
resistance
drain-source on-state
voltage
Conditions
V
DS
= 0 V;
V
GS
=
20
V
V
DS
= 15 V;
V
GS
=
10
V
I
G
=
1 A;
V
DS
= 0 V
V
DS
= 15 V;
I
D
= 0.5 nA
V
DS
= 15 V; V
GS
= 0 V
V
DS
= 0 V; V
GS
=
10
V;
f = 1 MHz
V
GS
= 0 V; I
D
= 0 A;
f = 1 kHz
V
GS
= 0 V; I
D
= 20 mA
V
GS
= 0 V; I
D
= 10 mA
V
GS
= 0 V; I
D
= 5 mA
Switching times (V
DD
= 10 V; V
GS
= 0 V)
t
d
delay time
I
D
= 20 mA; V
GSM
= 10 V
I
D
= 10 mA; V
GSM
= 6 V
I
D
= 5 mA; V
GSM
= 4 V
t
r
rise time
I
D
= 20 mA; V
GSM
= 10 V
I
D
= 10 mA; V
GSM
= 6 V
I
D
= 5 mA; V
GSM
= 4 V
t
off
turn-off time
I
D
= 20 mA; V
GSM
= 10 V
I
D
= 10 mA; V
GSM
= 6 V
I
D
= 5 mA; V
GSM
= 4 V
-
-
-
-
-
-
-
-
-
<6
-
-
<3
-
-
<25
-
-
-
-
-
-
-
-
-
-
-
-
<6
-
-
<4
-
-
<50
-
-
-
-
-
-
-
-
-
-
-
-
<10
-
-
<10
-
-
ns
ns
ns
ns
ns
ns
ns
ns
BSR56
Min
-
-
-
>4
<10
-
-
-
-
-
-
-
Max
1.0
1.0
>40
-
-
>50
-
<5
<25
<750
-
-
-
-
-
>2
<6
-
-
-
-
-
-
-
BSR57
Min
Max
1.0
1.0
>40
-
-
>20
<100
<5
<40
-
<500
-
BSR58
Min
-
-
-
>0.8
<4
-
-
-
-
-
-
-
Max
1.0
1.0
>40
-
-
>8
<80
<5
<60
-
-
nA
nA
V
V
V
mA
mA
pF
mV
mV
Unit
<400 mV
<100 ns
BSR56_57_58
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 25 June 2014
4 of 10
NXP Semiconductors
BSR56; BSR57; BSR58
N-channel FETs
0
V
i
V
GSM
t
d
t
r
10%
V
o
90%
aaa-013765
200 ns
t
off
Fig 2.
Switching times waveforms
V
DD
R
V
o
V
i
50 Ω
TUT
aaa-013764
(1) BSR56; R = 464
(2) BSR57; R = 953
(3) BSR58; R = 1910
Fig 3.
Table 8.
Type
Test circuit
Test data
Pulse generator
t
r
, t
f
1 ns
1 ns
1 ns
Z
o
50
50
50
C
i
2.5 pF
2.5 pF
2.5 pF
0.02
0.02
0.02
Oscilloscope
t
r
0.75 ns
0.75 ns
0.75 ns
R
i
1 M
1 M
1 M
BSR56
BSR57
BSR58
BSR56_57_58
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 25 June 2014
5 of 10
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