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FCH150N65F — N-Channel SuperFET
®
II FRFET
®
MOSFET
December 2014
FCH150N65F
N-Channel SuperFET
®
II FRFET
®
MOSFET
650 V, 24 A, 150 mΩ
Features
• 700 V @ T
J
= 150°C
• Typ. R
DS(on)
= 133 mΩ
• Ultra Low Gate Charge (Typ. Q
g
= 72 nC)
• Low Effective Output Capacitance (Typ. C
oss(eff.)
= 361 pF)
• 100% Avalanche Tested
• RoHS Compliant
Description
SuperFET
®
II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications. SuperFET
II FRFET
®
MOSFET’s optimized body diode reverse recovery
performance can remove additional component and improve
system reliability.
Applications
• LCD / LED / PDP TV • Telecom / Server Power Supplies
• Solar Inverter
• AC - DC Power Supply
D
G
G
D
S
TO-247
long leads
S
Absolute Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25
o
C)
- Derate Above 25 C
o
Parameter
- DC
- AC
- Continuous (T
C
= 25
o
C)
- Continuous (T
C
= 100 C)
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
o
FCH150N65F_F155
650
±20
(f > 1 Hz)
±30
24
14.9
72
663
4.7
2.98
100
50
298
2.38
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
o
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
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