BSC029N025S G
OptiMOS
®
2 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC
1
for target applications
• Logic level / N-channel
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• Superior thermal resistance
• Avalanche rated
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Type
BSC029N025S
Package
PG-TDSON-8
Marking
29N025S
Product Summary
V
DS
R
DS(on),max
I
D
25
2.9
100
V
mΩ
A
PG-TDSON-8
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
T
A
=25 °C,
R
thJA
=45 K/W
2)
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
C
=25 °C
T
A
=25 °C,
R
thJA
=45 K/W
2)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev. 1.2
page 1
T
j
,
T
stg
T
C
=25 °C
3)
I
D
=50 A,
R
GS
=25
Ω
I
D
=50 A,
V
DS
=24 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
100
81
24
200
680
6
±20
78
2.8
-55 ... 150
55/150/56
2008-10-13
°C
mJ
kV/µs
V
W
Unit
A
BSC029N025S G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
bottom
top
Thermal resistance,
junction - ambient
R
thJA
minimal footprint
6 cm
2
cooling area
2)
-
-
-
-
-
-
1.6
18
62
45
K/W
Values
typ.
max.
Unit
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=80 µA
V
DS
=25 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=25 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=50 A
V
GS
=10 V,
I
D
=50 A
Gate resistance
Transconductance
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=50 A
25
1.2
-
-
1.6
0.1
-
2
1
µA
V
-
-
-
-
-
53
10
10
3.6
2.4
1.2
106
100
100
4.5
2.9
-
-
Ω
S
nA
mΩ
1)
2)
J-STD20 and JESD22
2
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3
Rev. 1.2
page 2
2008-10-13
BSC029N025S G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
4)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
I
S
I
S,pulse
V
SD
T
C
=25 °C
V
GS
=0 V,
I
F
=50 A,
T
j
=25 °C
V
R
=15 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
-
-
-
0.84
50
200
1
V
A
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g(sync)
Q
oss
V
DS
=0.1 V,
V
GS
=0 to 5 V
V
DD
=15 V,
V
GS
=0 V
V
DD
=15 V,
I
D
=25 A,
V
GS
=0 to 5 V
-
-
-
-
-
-
-
-
11
6
8
13
31
2.9
27
32
15
8
12
19
41
-
36
42
V
nC
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15 V,
V
GS
=10 V,
I
D
=25 A,
R
G
=2.7
Ω
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
-
-
-
-
-
-
-
3830
1460
170
7.5
8
33
6
5090
1940
255
11
11
49
9
ns
pF
Values
typ.
max.
Unit
Reverse recovery charge
Q
rr
-
-
15
nC
4)
See figure 16 for gate charge parameter definition
Rev. 1.2
page 3
2008-10-13
BSC029N025S G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10
V
90
120
75
100
60
80
P
tot
[W]
45
I
D
[A]
0
40
80
120
160
60
30
40
15
20
0
0
0
40
80
120
160
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
limited by on-state
resistance
10 µs
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
10
2
100 µs
10
0
0.5
Z
thJC
[K/W]
I
D
[A]
0.2
0.1
0.05
1 ms
10
1
10 ms
10
-1
0.02
0.01
DC
single pulse
10
0
10
-1
10
0
10
1
10
2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.2
page 4
2008-10-13
BSC029N025S G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
200
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
10
3V
3.2 V
3.4 V
3.7 V
10 V
4.5 V
160
4V
8
I
D
[A]
3.7 V
R
DS(on)
[m
Ω
]
120
6
4V
80
3.4 V
4
4.5 V
40
3.2 V
3V
2.8 V
2
10 V
0
0
1
2
3
0
0
50
100
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
200
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
150
160
120
120
90
80
g
fs
[S]
60
40
150 °C
25 °C
I
D
[A]
30
0
0
1
2
3
4
5
0
0
25
50
75
V
GS
[V]
I
D
[A]
Rev. 1.2
page 5
2008-10-13
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