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BSP317PL6327HTSA1

Description
MOSFET P-CH 250V 0.43A SOT-223
Categorysemiconductor    Discrete semiconductor   
File Size76KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSP317PL6327HTSA1 Overview

MOSFET P-CH 250V 0.43A SOT-223

BSP317PL6327HTSA1 Parametric

Parameter NameAttribute value
FET typeP channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)250V
Current - Continuous Drain (Id) at 25°C430mA(Ta)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs4 ohms @ 430mA, 10V
Vgs (th) (maximum value) when different Id2V @ 370µA
Gate charge (Qg) at different Vgs (maximum value)15.1nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)262pF @ 25V
FET function-
Power dissipation (maximum)1.8W(Ta)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingPG-SOT223-4
Package/casingTO-261-4,TO-261AA
Preliminary data
BSP 317 P
SIPMOS
Small-Signal-Transistor
Feature
P-Channel
Enhancement mode
Logic Level
dv/dt rated
Product Summary
V
DS
R
DS(on)
I
D
-250
4
-0.43
SOT-223
Drain
pin 2/4
Gate
pin1
Source
pin 3
2
1
VPS05163
V
A
4
3
Type
Package
BSP 317 P SOT-223
Ordering Code
Q67042-S4167
Tape and Reel Information
-
Marking
BSP317P
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
A
=25°C
T
A
=70°C
Symbol
I
D
Value
-0.43
-0.34
Unit
A
Pulsed drain current
T
A
=25°C
I
D puls
dv/dt
V
GS
P
tot
T
j ,
T
stg
-1.72
6
±20
1.8
-55... +150
55/150/56
kV/µs
V
W
°C
Reverse diode dv/dt
I
S
=-0.43A,
V
DS
=-200V, di/dt=-200A/µs,
T
jmax
=150°C
Gate source voltage
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
2002-07-17

BSP317PL6327HTSA1 Related Products

BSP317PL6327HTSA1 BSP317PE6327 BSP317PE6327T
Description MOSFET P-CH 250V 0.43A SOT-223 mosfet P-CH 250v 430ma sot223 MOSFET P-CH 250V 0.43A SOT223
FET type P channel - P channel
technology MOSFET (metal oxide) - MOSFET (metal oxide)
Drain-source voltage (Vdss) 250V - 250V
Current - Continuous Drain (Id) at 25°C 430mA(Ta) - 430mA(Ta)
Drive voltage (maximum Rds On, minimum Rds On) 4.5V,10V - 4.5V,10V
Rds On (maximum value) when different Id, Vgs 4 ohms @ 430mA, 10V - 4 ohms @ 430mA, 10V
Vgs (th) (maximum value) when different Id 2V @ 370µA - 2V @ 370µA
Gate charge (Qg) at different Vgs (maximum value) 15.1nC @ 10V - 15.1nC @ 10V
Vgs (maximum value) ±20V - ±20V
Input capacitance (Ciss) at different Vds (maximum value) 262pF @ 25V - 262pF @ 25V
Power dissipation (maximum) 1.8W(Ta) - 1.8W(Ta)
Operating temperature -55°C ~ 150°C(TJ) - -55°C ~ 150°C(TJ)
Installation type surface mount - surface mount
Supplier device packaging PG-SOT223-4 - PG-SOT223-4
Package/casing TO-261-4,TO-261AA - TO-261-4,TO-261AA
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