BT151-650L,127 datasheet, PDF - EEWORLD Datasheet

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BT151-650L,127: DescriptionTHYRISTOR 12A 650V TO220AB; CategoryAnalog mixed-signal IC Trigger device; File Size206KB，12 Pages; ManufacturerWeEn Semiconductors; Environmental Compliance

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BT151-650L,127 Overview

THYRISTOR 12A 650V TO220AB

BT151-650L,127 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Shell connection	ANODE
Configuration	SINGLE
Maximum DC gate trigger current	5 mA
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum rms on-state current	12 A
Guideline	IEC-60134
Off-state repetitive peak voltage	650 V
Repeated peak reverse voltage	650 V
surface mount	NO
Terminal surface	Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Trigger device type	SCR
Base Number Matches	1

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BT151-650L

SCR

24 February 2018

Product data sheet

1. General description

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for

use in applications requiring sensitive gate, high bidirectional blocking voltage capability and high

thermal cycling performance.

2. Features and benefits

•

High bidirectional blocking voltage capability

High surge current capability

High thermal cycling performance

Sensitive gate

3. Applications

•

Ignition circuits

Motor control

Protection circuits

Voltage regulation

4. Quick reference data

Table 1. Quick reference data

Symbol

RRM

T(AV)

T(RMS)

TSM

Parameter

repetitive peak reverse

voltage

average on-state

current

RMS on-state current

half sine wave; T

≤ 109 °C;

Fig. 1

half sine wave; T

≤ 109 °C;

Fig. 2;

Fig. 3

Conditions

Min

= 12 V; I

= 0.1 A; T

= 25 °C;

Fig. 7

= 436 V; T

= 125 °C; R

= 100 Ω;

= 67% of V

DRM

); exponential

waveform;

Fig. 12

200

Typ

1000

Max

650

7.5

120

132

125

Unit

°C

V/µs

non-repetitive peak on- half sine wave; T

j(init)

= 25 °C;

= 10 ms;

Fig. 4; Fig. 5

state current

half sine wave; T

j(init)

= 25 °C;

= 8.3 ms

/dt

junction temperature

gate trigger current

rate of rise of off-state

voltage

Static characteristics

Dynamic characteristics

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