Rev 4; 10/06
DS2045Y/AB Single-Piece 1Mb
Nonvolatile SRAM
General Description
The DS2045 is a 1Mb reflowable nonvolatile (NV) SRAM,
which consists of a static RAM (SRAM), an NV con-
troller, and an internal rechargeable manganese lithium
(ML) battery. These components are encased in a sur-
face-mount module with a 256-ball BGA footprint.
Whenever V
CC
is applied to the module, it recharges the
ML battery, powers the SRAM from the external power
source, and allows the contents of the SRAM to be mod-
ified. When V
CC
is powered down or out of tolerance,
the controller write-protects the SRAM’s contents and
powers the SRAM from the battery. Two versions of the
DS2045 are available, which provide either a 5% or 10%
power-monitoring trip point. The DS2045 also contains a
power-supply monitor output,
RST,
which can be used
as a CPU supervisor for a microprocessor.
Features
o
Single-Piece, Reflowable, 27mm
2
PBGA Package
Footprint
o
Internal ML Battery and Charger
o
Unconditionally Write-Protects SRAM when V
CC
is Out-of-Tolerance
o
Automatically Switches to Battery Supply when
V
CC
Power Failures Occur
o
Internal Power-Supply Monitor Detects Power Fail
at 5% or 10% Below Nominal V
CC
(5V)
o
Reset Output can be used as a CPU Supervisor
for a Microprocessor
o
Industrial Temperature Range (-40°C to +85°C)
o
UL Recognized
DS2045Y/AB
Applications
RAID Systems and Servers
Industrial Controllers
Gaming
Router/Switches
POS Terminals
Data-Acquisition Systems
Fire Alarms
PLC
Pin Configuration appears at end of data sheet.
Ordering Information
PART
DS2045AB-70#
DS2045AB-100#
DS2045Y-70#
DS2045Y-100#
TEMP RANGE
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
PIN-PACKAGE
256 Ball 27mm
2
BGA Module
256 Ball 27mm
2
BGA Module
256 Ball 27mm
2
BGA Module
256 Ball 27mm
2
BGA Module
SPEED (ns)
70
100
70
100
SUPPLY TOLERANCE
5
5
10
10
#Denotes
a RoHS-compliant device that may include lead that is exempt under the RoHS requirements.
Typical Operating Circuit
P4.0
P3.6
P3.7
(CE0)
(WR)
(RD)
CE
WE
OE
8051
MICROPROCESSOR
AD0–AD7
8 BITS
DQ0–7
DS2045
128k x 8
NV SRAM
P1.0–7
P4.4
P2.0–7
P3.2
(INT0)
8 BITS
A0–7
A16
8 BITS
A8–15
RST
______________________________________________
Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
DS2045Y/AB Single-Piece 1Mb
Nonvolatile SRAM
DS2045Y/AB
ABSOLUTE MAXIMUM RATINGS
Voltage on Any Pin Relative to Ground .................-0.3V to +6.0V
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range ...............................-40°C to +85°C
Soldering Temperature .....................See IPC/JEDEC J-STD-020
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(T
A
= -40°C to +85°C)
PARAMETER
Supply Voltage
Input Logic 1
Input Logic 0
SYMBOL
V
CC
V
IH
V
IL
DS2045AB
DS2045Y
CONDITIONS
MIN
4.75
4.50
2.2
0
TYP
MAX
5.25
5.50
V
CC
0.8
UNITS
V
V
V
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V ±5% for DS2045AB, V
CC
= 5V ±10% for DS2045Y, T
A
= -40°C to +85°C.)
PARAMETER
Input Leakage Current
I/O Leakage Current
Output-Current High
Output-Current Low
Output-Current Low
RST
Standby Current
Operating Current
Write Protection Voltage
SYMBOL
I
IL
I
IO
I
OH
I
OL
I
OL
RST
I
CCS1
I
CCS2
I
CCO1
V
TP
CE
= V
CC
At 2.4V
At 0.4V
At 0.4V (Note 1)
CE
= 2.2V
CE
= V
CC
- 0.5V
t
RC
= 200ns, outputs open
DS2045AB
DS2045Y
4.50
4.25
4.62
4.37
CONDITIONS
MIN
-1.0
-1.0
-1.0
2.0
10.0
0.5
0.2
7
5
85
4.75
4.50
TYP
MAX
+1.0
+1.0
UNITS
µA
µA
mA
mA
mA
mA
mA
V
CAPACITANCE
(T
A
= +25°C)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
OUT
Not tested
Not tested
CONDITIONS
MIN
TYP
7
7
MAX
UNITS
pF
pF
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V ±5% for DS2045AB, V
CC
= 5V ±10% for DS2045Y, T
A
= -40°C to +85°C.)
PARAMETER
Read Cycle Time
Access Time
OE
to Output Valid
SYMBOL
t
RC
t
ACC
t
OE
CONDITIONS
DS2045AB-70
DS2045Y-70
MIN
70
70
35
MAX
DS2045AB-100
DS2045Y-100
MIN
100
100
50
MAX
ns
ns
ns
UNITS
2
_____________________________________________________________________
DS2045Y/AB Single-Piece 1Mb
Nonvolatile SRAM
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V ±5% for DS2045AB, V
CC
= 5V ±10% for DS2045Y, T
A
= -40°C to +85°C.)
PARAMETER
CE
to Output Valid
OE
or
CE
to Output Active
Output High Impedance from
Deselection
Output Hold from Address Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Impedance from
WE
Output Active from
WE
Data Setup Time
Data Hold Time
SYMBOL
t
CO
t
COE
t
OD
t
OH
t
WC
t
WP
t
AW
t
WR1
t
WR2
t
ODW
t
OEW
t
DS
t
DH1
t
DH2
(Note 4)
(Note 5)
(Note 2)
(Note 2)
(Note 6)
(Note 4)
(Note 5)
5
30
0
10
(Note 3)
(Note 2)
(Note 2)
5
70
55
0
5
15
25
5
40
0
10
5
25
5
100
75
0
5
15
35
CONDITIONS
DS2045AB-70
DS2045Y-70
MIN
MAX
70
5
35
DS2045AB-100
DS2045Y-100
MIN
MAX
100
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
UNITS
DS2045Y/AB
POWER-DOWN/POWER-UP TIMING
(T
A
= -40°C to +85°C)
PARAMETER
V
CC
Fail Detect to
CE
and
WE
Inactive
V
CC
Slew from V
TP
to 0V
V
CC
Slew from 0V to V
TP
V
CC
Valid to
CE
and
WE
Inactive
V
CC
Valid to End of Write Protection
V
CC
Fail Detect to
RST
Active
V
CC
Valid to
RST
Inactive
SYMBOL
t
PD
t
F
t
R
t
PU
t
REC
t
RPD
t
RPU
(Note 1)
(Note 1)
225
350
CONDITIONS
(Note 7)
150
150
2
125
3.0
525
MIN
TYP
MAX
1.5
UNITS
µs
µs
µs
ms
ms
µs
ms
DATA RETENTION
(T
A
= +25°C)
PARAMETER
Expected Data-Retention Time (Per Charge)
SYMBOL
t
DR
CONDITIONS
(Note 8)
MIN
2
TYP
3
MAX
UNITS
years
AC TEST CONDITIONS
Input Pulse Levels:
Input Pulse Rise and Fall Times:
Input and Output Timing Reference Level:
Output Load:
V
IL
= 0.0V, V
IH
= 3.0V
5ns
1.5V
1 TTL Gate + C
L
(100pF) including scope and jig
_____________________________________________________________________
3
DS2045Y/AB Single-Piece 1Mb
Nonvolatile SRAM
Write Cycle 1
DS2045Y/AB
t
WC
ADDRESSES
V
IH
V
IL
t
AW
CE
V
IL
t
WP
WE
V
IH
t
ODW
D
OUT
HIGH
IMPEDANCE
t
DS
V
IH
D
IN
V
IL
(SEE NOTES 2, 3, 4, 6, 10–13.)
DATA IN STABLE
V
IL
t
DH1
V
IH
V
IL
V
IL
V
IH
t
OEW
V
IL
t
WR1
V
IH
V
IL
V
IH
V
IL
Write Cycle 2
t
WC
ADDRESSES
V
IH
V
IL
t
AW
t
WP
V
IH
V
IL
V
IL
V
IL
V
IH
t
WR2
V
IH
V
IL
V
IH
V
IL
CE
V
IH
WE
t
COE
V
IL
t
ODW
V
IL
D
OUT
t
DS
V
IH
D
IN
V
IL
(SEE NOTES 2, 3, 5, 6, 10–13.)
DATA IN STABLE
V
IL
t
DH2
V
IH
_____________________________________________________________________
5
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