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ISL6613BCRZ-T

Description
IC MOSFET DRVR SYNC BUCK 10-DFN
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size679KB,12 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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ISL6613BCRZ-T Overview

IC MOSFET DRVR SYNC BUCK 10-DFN

ISL6613BCRZ-T Parametric

Parameter NameAttribute value
Brand NameIntersil
MakerRenesas Electronics Corporation
Parts packaging codeDFN
package instructionHVSON, SOLCC10,.11,20
Contacts10
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time17 weeks
high side driverYES
Interface integrated circuit typeHALF BRIDGE BASED MOSFET DRIVER
JESD-30 codeS-PDSO-N10
JESD-609 codee3
length3 mm
Humidity sensitivity level3
Number of functions1
Number of terminals10
Maximum operating temperature85 °C
Minimum operating temperature
Nominal output peak current3 A
Package body materialPLASTIC/EPOXY
encapsulated codeHVSON
Encapsulate equivalent codeSOLCC10,.11,20
Package shapeSQUARE
Package formSMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Peak Reflow Temperature (Celsius)260
power supply5/12,12 V
Certification statusNot Qualified
Maximum seat height1 mm
Maximum supply voltage13.2 V
Minimum supply voltage7 V
Nominal supply voltage12 V
Supply voltage 1-max13.2 V
Mains voltage 1-minute5 V
Supply voltage1-Nom12 V
surface mountYES
Temperature levelOTHER
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formNO LEAD
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width3 mm
ISL6612B, ISL6613B
NOT RECOMMENDED FOR NEW DESIGNS
RECOMMENDED REPLACEMENT PARTS
ISL6622A, ISL6622B
DATASHEET
FN9205
Rev.4.00
May 1, 2012
Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
The ISL6612B and ISL6613B are high frequency MOSFET
drivers specifically designed to drive upper and lower power
N-Channel MOSFETs in a synchronous rectified buck
converter topology. These drivers combined with HIP63xx or
ISL65xx Multi-Phase Buck PWM controllers and N-Channel
MOSFETs form complete core-voltage regulator solutions for
advanced microprocessors.
The ISL6612B drives the upper gate to above rising VCC
POR (7V), while the lower gate can be independently driven
over a range from 5V to 12V. The ISL6613B drives both
upper and lower gates over a range of 5V to 12V. This drive-
voltage provides the flexibility necessary to optimize
applications involving trade-offs between gate charge and
conduction losses. These drivers are optimized for POL
DC/DC Converters for IBA Systems.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs
from conducting simultaneously and to minimize the dead
time. These products add an overvoltage protection feature
operational before VCC exceeds its turn-on threshold, at
which the PHASE node is connected to the gate of the low
side MOSFET (LGATE). The output voltage of the converter
is then limited by the threshold of the low side MOSFET,
which provides some protection to the microprocessor if the
upper MOSFET(s) is shorted during initial start-up.
These drivers also feature a three-state PWM input which,
working together with Intersil’s multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.
Features
• Pin-to-pin Compatible with HIP6601 SOIC family
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Low VCC Rising Threshold (7V) for IBA Applications.
• Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- Auto-zero of r
DS(ON)
Conduction Offset Effect
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
• 36V Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 2MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
• Three-State PWM Input for Output Stage Shutdown
• Three-State PWM Input Hysteresis for Applications With
Power Sequencing Requirement
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Expandable Bottom Copper Pad for Enhanced Heat
Sinking
• Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
• Pb-Free (RoHS Compliant)
Applications
• Optimized for POL DC/DC Converters for IBA Systems
• Core Regulators for Intel
®
and AMD
®
Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
• Technical Brief TB417 for Power Train Design, Layout
Guidelines, and Feedback Compensation Design
FN9205 Rev.4.00
May 1, 2012
Page 1 of 12

ISL6613BCRZ-T Similar Products

Part Number Manufacturer Description
ISL6613BCRZ Renesas(瑞萨电子) Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP; DFN10; Temp Range: 0° to 70°

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