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10A05

Description
10 A, 50 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size116KB,2 Pages
ManufacturerBytes
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10A05 Overview

10 A, 50 V, SILICON, RECTIFIER DIODE

10A005
10.0 AMP SILICON RECTIFIERS
THRU
10A10
VOLTAGE RANGE
50 TO 1000 Volts
CURRENT
10.0
Amperes
R-6
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
.360(9.1)
.340(8.6)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 1.65 grams
.360(9.1)
.340(8.6)
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=60 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 10.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance R
θ
JA (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
10A05
50
35
50
10A1
100
70
100
10A2
200
140
200
10A4
400
280
400
10.0
400
1.0
10.0
400
100
10
-65
+150
10A6
600
420
600
10A8
800
560
800
10A10
1000
700
1000
UNITS
V
V
V
A
A
V
µA
µA
pF
C/W
C
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length.
128

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