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JANS1N5304UR-1

Description
Current Regulator Diode, 1.8mA I(S), 1.75V V(L), Silicon, DO-213AB, HERMETIC SEALED, GLASS, LL41, MELF-2
CategoryDiscrete semiconductor    diode   
File Size337KB,4 Pages
ManufacturerCobham Semiconductor Solutions
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JANS1N5304UR-1 Overview

Current Regulator Diode, 1.8mA I(S), 1.75V V(L), Silicon, DO-213AB, HERMETIC SEALED, GLASS, LL41, MELF-2

JANS1N5304UR-1 Parametric

Parameter NameAttribute value
Parts packaging codeDO-213AB
package instructionO-LELF-R2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeCURRENT REGULATOR DIODE
JEDEC-95 codeDO-213AB
JESD-30 codeO-LELF-R2
JESD-609 codee0
Maximum limit voltage1.75 V
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.5 W
Certification statusNot Qualified
GuidelineMIL-19500
Nominal regulation current (Ireg)1.8 mA
surface mountYES
technologyFIELD EFFECT
Terminal surfaceTIN LEAD
Terminal formWRAP AROUND
Terminal locationEND
Base Number Matches1
Current Regulator Diode Series
1N5283UR-1 thru 1N5314UR-1 &
1N7041UR-1 thru 1N7055UR-1
Features
High source impedance.
Internal metallurgical bond.
JAN, JANTX, JANTXV, and JANS qualification
per MIL-PRF-19500/463 available.
Description
The 1N5283UR-1 thru 1N5314UR-1 and 1N7041UR-1 thru 1N7055UR-1 series of 0.5 watt
current regulators provides a selection from 0.22 mA to 10 mA in standard 10% tolerances. These
devices regulate current over a broad voltage range. The D0-213AB package offers a double plug
internal bond connection with a large die element for its unique function as a current limiter.
Applications
Double-plug construction.
Regulates current over a broad operating voltage and temperature range.
Extensive selection from 0.22 mA to 10 mA.
Standard current tolerances are plus/minus 10 %.
Flexible axial-lead mounting terminals.
Nonsensitive to ESD.
Maximum Ratings
Parameters / Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Lead @ EC = 0.375 in
Therrnal lmpedance
Steady-State Power Dissipation @ TEC = +120 °C, L = 3/8
(1)
Solder Pad Temperature @ 10 sec maximum
NOTE 1: Derate at 10mW/°C above 125 °C
Symbol
TJ and TSTG
R
ƟJL
Z
ƟJX
PD
TSP
Value
-65 to +175
100
25
500
260
Unit
°C
°C / W
°C / W
mW
°C
Revision Date: 1/31/2014
1

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