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IXGH28N60A3

Description
IGBT
Categorysemiconductor    Discrete semiconductor   
File Size257KB,6 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
Download Datasheet Parametric Compare View All

IXGH28N60A3 Overview

IGBT

IXGH28N60A3 Parametric

Parameter NameAttribute value
IGBT typePT
Voltage - collector-emitter breakdown (maximum)600V
Current - Collector (Ic) (Maximum)75A
Pulse current - collector (Icm)170A
Vce(on) when different Vge,Ic1.4V @ 15V,24A
Power - Max190W
switching energy700µJ (on), 2.4mJ (off)
input typestandard
gate charge66nC
Td (on/off) value at 25°C18ns/300ns
Test Conditions480V, 24A, 10 Ohm, 15V
Reverse recovery time (trr)26ns
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Package/casingTO-247-3
Supplier device packagingTO-247AD
Advance Technical Information
GenX3
TM
600V
IGBT
Ultra Low Vsat PT IGBT for up
to 5kHz Switching
IXGA28N60A3
IXGP28N60A3
IXGH28N60A3
V
CES
= 600V
I
C110
= 28A
V
CE(sat)
 
1.4V
TO-263 (IXGA)
G
E
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1M
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1ms
V
GE
= 15V, T
VJ
= 125°C, R
G
= 10
Clamped Inductive Load
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
75
28
170
I
CM
= 48
@V
CE
V
CES
190
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
°C
N/lb
Nm/lb.in
g
g
g
C (Tab)
TO-220 (IXGP)
G
CE
C (Tab)
TO-247 AD (IXGH)
G
C
E
C (Tab)
G = Gate
E = Emitter
Features
C
= Collector
Tab = Collector
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Force (TO-263)
Mounting Torque (TO-247 & TO-220)
TO-263
TO-220
TO-247
300
260
10..65 / 2.2..14.6
1.13 / 10
2.5
3.0
6.0
Optimized for Low Conduction Losses
Square RBSOA
International Standard Packages
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250A, V
GE
= 0V
= 250A, V
CE
= V
GE
T
J
= 125C
V
CE
= 0V, V
GE
=
20V
I
C
= 24A, V
GE
= 15V, Note 1
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
600
3.0
5.0
25
250
100
1.4
1.3
V
V
A
A
nA
V
V
V
CE
= V
CES
, V
GE
= 0V
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Portection Circuits
© 2016 IXYS CORPORATION, All Rights Reserved
DS100725(5/16)

IXGH28N60A3 Related Products

IXGH28N60A3 IXGP28N60A3 IXGA28N60A3
Description IGBT IGBT IGBT
IGBT type PT PT PT
Voltage - collector-emitter breakdown (maximum) 600V 600V 600V
Current - Collector (Ic) (Maximum) 75A 75A 75A
Pulse current - collector (Icm) 170A 170A 170A
Vce(on) when different Vge,Ic 1.4V @ 15V,24A 1.4V @ 15V,24A 1.4V @ 15V,24A
Power - Max 190W 190W 190W
switching energy 700µJ (on), 2.4mJ (off) 700µJ (on), 2.4mJ (off) 700µJ (on), 2.4mJ (off)
input type standard standard standard
gate charge 66nC 66nC 66nC
Td (on/off) value at 25°C 18ns/300ns 18ns/300ns 18ns/300ns
Test Conditions 480V, 24A, 10 Ohm, 15V 480V, 24A, 10 Ohm, 15V 480V, 24A, 10 Ohm, 15V
Reverse recovery time (trr) 26ns 26ns 26ns
Operating temperature -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ)
Installation type Through hole Through hole surface mount
Package/casing TO-247-3 TO-220-3 TO-263-3, D²Pak (2-lead + tab), TO-263AB
Supplier device packaging TO-247AD TO-220 TO-263
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