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IRF7307

Description
Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size282KB,10 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRF7307 Overview

Power MOSFET

IRF7307 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Reach Compliance Codeunknow
ECCN codeEAR99
Samacsys DescriptiPower MOSFET
Other featuresLOGIC LEVEL COMPATIBLE
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)3.6 A
Maximum drain current (ID)4.3 A
Maximum drain-source on-resistance0.05 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee0
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs)1.4 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
Transistor component materialsSILICON
PD - 95179
IRF7307PbF
Generation V Technology
l
Ultra Low On-Resistance
l
Dual N and P Channel Mosfet
l
Surface Mount
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Fast Switching
l
Lead-Free
Description
l
HEXFET
®
Power MOSFET
S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
2
3
4
7
D1
D1
D2
D2
N-Ch
V
DSS
20V
P-Ch
-20V
6
5
P-CHANNEL MOSFET
Top View
R
DS(on)
0.050Ω 0.090Ω
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J,
T
STG
10 Sec. Pulse Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
‚
Junction and Storage Temperature Range
Max.
N-Channel
5.7
5.2
4.1
21
2.0
0.016
± 12
5.0
-55 to + 150
-5.0
P-Channel
-4.7
-4.3
-3.4
-17
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R
θJA
Maximum Junction-to-Ambient„
Typ.
–––
Max.
62.5
Units
°C/W
10/7/04

IRF7307 Related Products

IRF7307
Description Power MOSFET
Is it Rohs certified? incompatible
Maker International Rectifier ( Infineon )
Reach Compliance Code unknow
ECCN code EAR99
Samacsys Descripti Power MOSFET
Other features LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V
Maximum drain current (Abs) (ID) 3.6 A
Maximum drain current (ID) 4.3 A
Maximum drain-source on-resistance 0.05 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G8
JESD-609 code e0
Humidity sensitivity level 1
Number of components 2
Number of terminals 8
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) 245
Polarity/channel type N-CHANNEL AND P-CHANNEL
Maximum power dissipation(Abs) 1.4 W
Certification status Not Qualified
surface mount YES
Terminal surface Tin/Lead (Sn/Pb)
Terminal form GULL WING
Terminal location DUAL
Maximum time at peak reflow temperature 30
Transistor component materials SILICON
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