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FJN4312RBU

Description
TRANS PREBIAS PNP 300MW TO92-3
Categorysemiconductor    Discrete semiconductor   
File Size24KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FJN4312RBU Overview

TRANS PREBIAS PNP 300MW TO92-3

FJN4312RBU Parametric

Parameter NameAttribute value
Transistor typePNP - Pre-biased
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)40V
Resistor - Substrate (R1)47 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value)100 @ 1mA,5V
Vce saturation value (maximum value) when different Ib,Ic300mV @ 1mA,10mA
Current - collector cutoff (maximum)100nA(ICBO)
Frequency - Transition200MHz
Power - Max300mW
Installation typeThrough hole
Package/casingTO-226-3, TO-92-3 standard body (!--TO-226AA)
Supplier device packagingTO-92-3
FJN4312R
FJN4312R
Switching Application
(Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=47KΩ)
• Complement to FJN3312R
1
TO-92
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-40
-5
-100
300
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
E
R
B
Equivalent Circuit
C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE
V
CE
(sat)
C
ob
f
T
R
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Input Resistor
Test Condition
I
C
= -100µA, I
E
=0
I
C
= -1mA, I
B
=0
V
CB
= -30V, I
E
=0
V
CE
= -5V, I
C
= -1mA
I
C
= -10mA, I
B
= -1mA
V
CB
= -10V, I
E
=0
f=1MHz
V
CE
= -10V, I
C
= -5mA
32
5.5
200
47
62
100
Min.
-40
-40
-0.1
600
-0.3
V
pF
MHz
KΩ
Typ.
Max.
Units
V
V
µA
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002

FJN4312RBU Related Products

FJN4312RBU FJN4312RTA
Description TRANS PREBIAS PNP 300MW TO92-3 TRANS PREBIAS PNP 300MW TO92-3
Transistor type PNP - Pre-biased PNP - Pre-biased
Current - Collector (Ic) (Maximum) 100mA 100mA
Voltage - collector-emitter breakdown (maximum) 40V 40V
Resistor - Substrate (R1) 47 kOhms 47 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value) 100 @ 1mA,5V 100 @ 1mA,5V
Vce saturation value (maximum value) when different Ib,Ic 300mV @ 1mA,10mA 300mV @ 1mA,10mA
Current - collector cutoff (maximum) 100nA(ICBO) 100nA(ICBO)
Frequency - Transition 200MHz 200MHz
Power - Max 300mW 300mW
Installation type Through hole Through hole
Package/casing TO-226-3, TO-92-3 standard body (!--TO-226AA) TO-226-3, TO-92-3 (TO-226AA) (formed lead)
Supplier device packaging TO-92-3 TO-92-3

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