KSC2787
KSC2787
FM/AM RF AMP, MIX, CONV, OSC, IF
• Collector-Emitter Voltage : V
CEO
=30V
• High Current Gain Bandwidth Product : f
T
=300MHz (TYP)
• Low Output Capacitance : C
ob
=2.0pF (TYP)
1
TO-92S
1.Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
50
30
5
50
250
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
BE
(on)
V
CE
(sat)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=10µA, I
E
=0
I
C
=5mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=1mA
V
CE
=6V, I
C
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=6V, I
C
=1mA
V
CB
=6V, I
E
=0, f=1MHz
150
40
0.67
0.08
300
2.0
2.5
Min.
50
30
5
0.1
0.1
240
0.75
0.3
V
V
MHz
pF
Typ.
Max.
Units
V
V
V
µA
µA
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2787
Typical Characteristics
16
I
B
= 70
µ
A
12
I
B
= 60
µ
A
I
B
= 50
µ
A
8
I
B
= 40
µ
A
I
B
= 30
µ
A
4
I
B
= 20
µ
A
I
B
= 10
µ
A
0
0
4
8
12
16
20
24
1000
V
CE
= 6V
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
100
10
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
BE
[mV], SATURATION VOLTAGE
Figure 1. Static Characteristics
Figure 2. Base-Emitter On Voltage
V
CE
(sat), V
BE
(sat) [V], SATURATION VOLTAGE
1000
10
V
CE
= 6V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
1
V
BE
(sat)
100
0.1
V
CE
(sat)
10
0.1
1
10
100
0.01
0.1
1
10
100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. DC Current Gain
Figure 4. Saturation Voltage
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
1000
10
V
CE
= 6V
C
ob
[pF], OUTPUT CAPACITANCE
f = 1MHz
I
E
= 0
Cib
Cob
1
100
10
0.1
1
10
100
0.1
0.1
1
10
100
I
C
[mA], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. f
T
- I
C
Figure 6. Output Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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