KSB1121 PNP Epitaxial Planar Silicon Transistor
July 2005
KSB1121
PNP Epitaxial Planar Silicon Transistor
High Current Driver Applications
• Low Collector-Emitter Saturation Voltage
• Large Current Capacity
• Fast Switching Speed
• Complement to KSD1621
Marking
1 1
P Y
1
2 1
W W
Weekly code
Year code
h
FE
grage
SOT-89
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
P
C
*
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
T
a
= 25°C unless otherwise noted
Parameter
Ratings
-30
-25
-6
-2
500
1.3
150
-55 ~ 150
Units
V
V
V
A
mW
W
°C
°C
Collector Power Dissipation
Junction Temperature
Storage Temperature
* Mounted on Ceramic Board (250mm
2
x 0.8mm)
Electrical Characteristics
T
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
a
=
25°C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Test Condition
I
C
= -10µA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -10µA, I
C
= 0
V
CB
= -20V, I
E
= 0
V
BE
= -4V, I
C
= 0
V
CE
= -2V, I
C
= -0.1A
V
CE
= -2V, I
C
= -1.5A
I
C
= -1.5A, I
B
= -75mA
I
C
= -1.5A, I
B
= -75mA
Min.
-30
-25
-6
Typ.
Max.
Units
V
V
V
-100
-100
100
65
-0.35
-0.85
560
-0.6
-1.2
nA
nA
V
V
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
KSB1121 Rev. B1
KSB1121 PNP Epitaxial Planar Silicon Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic
I
B
= -200mA I
B
= -100mA I
B
= -50mA I
B
= -30mA
I
B
= -20mA
Figure 2. DC Current Gain
1000
-2.0
V
CE
= -2V
I
C
[A], COLLECTOR CURRENT
I
B
= -10mA
-1.2
h
FE
, DC CURRENT GAIN
-1.6
100
I
B
= -8mA
I
B
= -6mA
-0.8
I
B
= -4mA
I
B
= -2mA
10
-0.4
0.0
0.0
I
B
= 0
-0.2
-0.4
-0.6
-0.8
-1.0
1
-0.01
-0.1
-1
-10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
-10
Figure 4. Base-Emitter On Voltage
-3.2
V
CE
(sat)[V], SATURATION VOLTAGE
I
C
= 10 I
B
-2.8
V
CE
= -2V
I
C
[A], COLLECTOR CURRENT
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
0.0
0.0
-1
-0.1
-0.01
-0.01
-0.1
-1
-10
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 5. Collector Output Capacitance
1000
Figure 6. Current Gain Bandwidth Product
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
I
E
=0
f = 1MHz
V
CE
= -10V
C
ob
[pF], CAPACITANCE
100
100
10
1
-0.1
-1
-10
-100
10
-0.1
-1
-10
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[A], COLLECTOR CURRENT
KSB1121 Rev. B1
3
www.fairchildsemi.com
KSB1121 PNP Epitaxial Planar Silicon Transistor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST
®
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I
2
C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
Across the board. Around the world.™
The Power Franchise
®
Programmable Active Droop™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
®
QFET
®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER
®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
®
TINYOPTO™
TruTranslation™
UHC™
UltraFET
®
UniFET™
VCX™
Wire™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
5
KSB1121 Rev. B1
www.fairchildsemi.com
Talking
京公网安备 11010802033920号
EEWORLD
