DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC636; BC638; BC640
PNP medium power transistors
Product specification
Supersedes data of 2001 Oct 10
2004 Oct 11
Philips Semiconductors
Product specification
PNP medium power transistors
FEATURES
•
High current (max. 1 A)
•
Low voltage (max. 80 V).
APPLICATIONS
•
Audio and video amplifiers.
DESCRIPTION
PNP medium power transistor in a TO-92; SOT54 plastic
package. NPN complements: BC635, BC637 and BC639.
1
handbook, halfpage
BC636; BC638; BC640
PINNING
PIN
1
2
3
base
collector
emitter
DESCRIPTION
2
3
2
1
3
MAM285
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BC636
BC638
BC640
SC-43A
DESCRIPTION
plastic single-ended leaded (through hole) package; 3 leads
VERSION
SOT54
2004 Oct 11
2
Philips Semiconductors
Product specification
PNP medium power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BC636
BC638
BC640
V
CEO
collector-emitter voltage
BC636
BC638
BC640
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
PARAMETER
collector-base voltage
CONDITIONS
open emitter
BC636; BC638; BC640
MIN.
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
−45
−60
−100
−45
−60
−80
−5
−1
−1.5
−200
0.83
+150
150
+150
V
V
V
V
V
V
V
A
A
UNIT
mA
W
°C
°C
°C
VALUE
150
UNIT
K/W
2004 Oct 11
3
Philips Semiconductors
Product specification
PNP medium power transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
CONDITIONS
V
CB
=
−30
V; I
E
= 0 A
BC636; BC638; BC640
MIN.
−
−
−
63
63
40
63
100
MAX.
−100
−10
−100
−
250
−
160
250
−0.5
−1
−
1.6
UNIT
nA
µA
nA
V
CB
=
−30
V; I
E
= 0 A; T
j
= 150
°C
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−2
V; see Fig.2
I
C
=
−5
mA
I
C
=
−150
mA
I
C
=
−500
mA
DC current gain
BC636-10
BC636-16; BC638-16; BC640-16
V
CEsat
V
BE
f
T
h
FE1
-----------
h
FE2
collector-emitter saturation voltage
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
I
C
=
−500
mA; I
B
=
−50
mA
V
CE
=
−2
V; I
C
=
−500
mA
V
CE
= 2 V;
I
C
= 150 mA
V
CE
=
−2
V; I
C
=
−150
mA; see Fig.2
−
−
−
V
V
MHz
V
CE
=
−5
V; I
C
=
−50
mA; f = 100 MHz 100
handbook, full pagewidth
160
MBH730
hFE
120
VCE =
−2
V
80
40
0
−10
−1
−1
−10
−10
2
−10
3
IC (mA)
−10
4
Fig.2 DC current gain; typical values.
2004 Oct 11
4
Philips Semiconductors
Product specification
PNP medium power transistors
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
BC636; BC638; BC640
SOT54
c
E
d
A
L
b
1
D
2
e1
e
3
b
1
L1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
5.2
5.0
b
0.48
0.40
b1
0.66
0.55
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
e
2.54
e1
1.27
L
14.5
12.7
L
1(1)
max.
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
REFERENCES
IEC
JEDEC
TO-92
JEITA
SC-43A
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
04-06-28
2004 Oct 11
5
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