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BC639,116

Description
TRANS NPN 80V 1A TO-92
CategoryDiscrete semiconductor    The transistor   
File Size154KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

BC639,116 Overview

TRANS NPN 80V 1A TO-92

BC639,116 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-92
package instructionPLASTIC, SC-43A, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)250
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.8 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)180 MHz
VCEsat-Max0.5 V
Base Number Matches1
BC639; BCP56; BCX56
80 V, 1 A NPN medium power transistors
Rev. 08 — 22 June 2007
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series.
Table 1.
Product overview
Package
NXP
BC639
[2]
BCP56
BCX56
[1]
[2]
Type number
[1]
PNP complement
JEITA
SC-43A
SC-73
SC-62
JEDEC
TO-92
-
TO-243
BC640
BCP53
BCX53
SOT54
SOT223
SOT89
Valid for all available selection groups.
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
I
High current
I
Two current gain selections
I
High power dissipation capability
1.3 Applications
I
I
I
I
Linear voltage regulators
Low-side switches
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
single pulse; t
p
1 ms
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
Conditions
open base
Min
-
-
-
63
63
100
Typ
-
-
-
-
-
-
Max
80
1
1.5
250
160
250
Unit
V
A
A

BC639,116 Related Products

BC639,116 BC639,126 BC639,112
Description TRANS NPN 80V 1A TO-92 TRANS NPN 80V 1A TO-92 TRANS NPN 80V 1A TO-92
Brand Name NXP Semiconductor NXP Semiconductor NXP Semiconductor
Is it Rohs certified? conform to conform to conform to
Maker NXP NXP NXP
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A
Collector-emitter maximum voltage 80 V 80 V 80 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 25 40
JEDEC-95 code TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e3 e3 e3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 250 250 250
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.8 W 0.8 W 0.8 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 40 40 40
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 180 MHz 130 MHz 180 MHz
VCEsat-Max 0.5 V 0.5 V 0.5 V
Base Number Matches 1 1 1
Parts packaging code TO-92 - TO-92
package instruction PLASTIC, SC-43A, 3 PIN - PLASTIC, SC-43A, 3 PIN
Contacts 3 - 3
transistor applications SWITCHING - SWITCHING
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