DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC875; BC879
NPN Darlington transistors
Product specification
Supersedes data of 1999 May 28
2004 Nov 05
Philips Semiconductors
Product specification
NPN Darlington transistors
FEATURES
•
High DC current gain (min. 1000)
•
High current (max. 1 A)
•
Low voltage (max. 80 V)
•
Integrated diode and resistor.
APPLICATIONS
•
Relay drivers.
DESCRIPTION
NPN Darlington transistor in a TO-92 (SOT54) plastic
package. PNP complement: BC878.
Fig.1
handbook, halfpage
BC875; BC879
PINNING
PIN
1
2
3
base
collector
emitter
DESCRIPTION
2
1
1
2
3
MAM307
3
Simplified outline (TO-92; SOT54) and
symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BC875
BC879
SC-43A
DESCRIPTION
plastic single-ended leaded (through hole) package; 3 leads
VERSION
SOT54
2004 Nov 05
2
Philips Semiconductors
Product specification
NPN Darlington transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BC875
BC879
V
CES
collector-emitter voltage
BC875
BC879
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C;
note 1
open collector
V
BE
= 0 V
−
−
−
−
−
−
−
−65
−
−65
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
MIN.
BC875; BC879
MAX.
60
100
45
80
5
1
2
0.2
0.83
+150
150
+150
V
V
V
V
V
A
A
A
W
UNIT
°C
°C
°C
VALUE
150
UNIT
K/W
2004 Nov 05
3
Philips Semiconductors
Product specification
NPN Darlington transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CES
BC875
BC879
I
EBO
h
FE
emitter-base cut-off current
DC current gain
PARAMETER
collector-emitter cut-off current
V
BE
= 0 V
V
CE
= 45 V
V
CE
= 80 V
V
EB
= 4 V; I
C
= 0 A
V
CE
= 10 V; see Fig.2
I
C
= 150 mA
I
C
= 0.5 A
V
CEsat
V
BEsat
f
T
t
on
t
off
collector-emitter saturation voltage
base-emitter saturation voltage
transition frequency
I
C
= 0.5 A; I
B
= 0.5 mA
I
C
= 1 A; I
B
= 1 mA
I
C
= 1 A; I
B
= 1 mA
V
CE
= 5 V; I
C
= 0.5 A; f = 100 MHz
I
Con
= 500 mA; I
Bon
= 0.5 mA;
I
Boff
=
−0.5
mA
−
−
−
CONDITIONS
BC875; BC879
MIN.
TYP.
−
−
−
−
−
−
−
−
200
MAX. UNIT
50
50
50
−
−
1.3
1.8
2.2
−
−
−
V
V
V
MHz
nA
nA
nA
1000
2000
−
−
−
−
−
−
Switching times (between 10% and 90% levels)
turn-on time
turn-off time
500
1300
ns
ns
handbook, full pagewidth
5000
MGD838
hFE
4000
3000
2000
1000
0
10
−1
1
10
10
2
IC (mA)
10
3
V
CE
= 10 V.
Fig.2 DC current gain; typical values.
2004 Nov 05
4
Philips Semiconductors
Product specification
NPN Darlington transistors
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
BC875; BC879
SOT54
c
E
d
A
L
b
1
D
2
e1
e
3
b
1
L1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
5.2
5.0
b
0.48
0.40
b1
0.66
0.55
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
e
2.54
e1
1.27
L
14.5
12.7
L
1(1)
max.
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
REFERENCES
IEC
JEDEC
TO-92
JEITA
SC-43A
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
04-06-28
2004 Nov 05
5
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