DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D186
BC369
PNP medium power transistor;
20 V, 1 A
Product data sheet
Supersedes data of 2003 Nov 20
2004 Nov 05
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
FEATURES
•
High current
•
Two current gain selections.
APPLICATIONS
•
Linear voltage regulators
•
High side switches
•
Supply line switches
•
MOSFET drivers
•
Audio pre-amplifiers.
DESCRIPTION
PNP medium power transistor (see “Simplified outline,
symbol and pinning”) for package details.
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS
BC369
BC369-16
BC369-25
SOT54
SOT54
SOT54
EIAJ
SC-43A
SC-43A
SC-43A
C369
C36916
C36925
MARKING CODE
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CM
h
FE
PARAMETER
collector-emitter
voltage
collector current (DC)
peak collector current
DC current gain
BC369
BC369-16
BC369-25
85
100
160
BC369
MIN. MAX. UNIT
−
−
−
−20
−1
−2
375
250
375
V
A
A
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PINNING
TYPE NUMBER
BC369
SIMPLIFIED OUTLINE AND SYMBOL
PIN
1
handbook, halfpage
2
3
DESCRIPTION
base
collector
emitter
2
1
3
1
2
3
MAM285
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BC369
BC369-16
BC369-25
SC-43A
DESCRIPTION
plastic single-ended leaded (through hole) package; 3 leads
VERSION
SOT54
2004 Nov 05
2
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Notes
1. Refer to SOT54 (SC-43A) standard mounting conditions.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C;
notes 1 and 2
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−32
−20
−5
−1
−2
−200
830
+150
150
+150
BC369
UNIT
V
V
V
A
A
mA
mW
°C
°C
°C
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint for SOT54.
handbook, halfpage
1
MLE301
Ptot
(W)
0.8
0.6
0.4
0.2
0
−65
−5
55
175
115
Tamb (°C)
Fig.1
Power derating curve for standard PCB
footprint.
2004 Nov 05
3
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Notes
1. Refer to SOT54 (SC-43A) standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
T
amb
≤
25
°C;
notes 1 and 2
VALUE
150
BC369
UNIT
K/W
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint for SOT54.
handbook, full pagewidth
10
3
MLE302
Rth(j-a)
(K/W)
10
2
(1)
(2)
(3)
(4)
(5)
(6)
10
(7)
(8)
(9)
P
1
(10)
δ
=
tp
T
tp
T
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
tp (s)
10
3
(1)
δ
= 1.0.
(2)
δ
= 0.75.
(3)
δ
= 0.5.
(4)
δ
= 0.03.
(5)
δ
= 0.2.
(6)
δ
= 0.1.
(7)
δ
= 0.05.
(8)
δ
= 0.02.
(9)
δ
= 0.01.
(10)
δ
= 0.0.
Fig.2
Transient thermal resistance from junction to ambient as a function of pulse time for standard PCB
footprint.
2004 Nov 05
4
NXP Semiconductors
Product data sheet
PNP medium power transistor;
20 V, 1 A
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
BC369
V
CE
=
−10
V; I
C
=
−5
mA
V
CE
=
−1
V; I
C
=
−500
mA
V
CE
=
−1
V; I
C
=
−1
A
BC369-16
BC369-25
V
CEsat
V
BE
C
c
f
T
base-emitter voltage
collector capacitance
transition frequency
V
CE
=
−1
V; I
C
=
−500
mA
V
CE
=
−1
V; I
C
=
−500
mA
V
CE
=
−10
V; I
C
=
−5
mA
V
CE
=
−1
V; I
C
=
−1
A
V
CB
=
−10
V; I
E
= i
e
= 0 A; f = 1 MHz
50
85
60
100
160
−
−
−
−
−
−
−
−
−
−
−
−
28
140
−
CONDITIONS
V
CB
=
−25
V; I
E
= 0 A
V
CB
=
−25
V; I
E
= 0 A; T
j
= 150
°C
V
EB
=
−5
V; I
C
= 0 A
MIN.
−
−
−
TYP.
−
−
−
BC369
MAX. UNIT
−100
−10
−100
nA
μA
nA
375
−
250
375
−500
−700
−1
−
−
mV
mV
V
pF
MHz
collector-emitter saturation voltage I
C
=
−1
A; I
B
=
−100
mA
V
CE
=
−5
V; I
C
=
−50
mA; f = 100 MHz 40
2004 Nov 05
5